Abstract: A sputtering apparatus for coating a substrate comprising a first electrode for supporting a suitable target material and a second electrode for supporting a substrate, upon which a coating is deposited. A source of RF power is connected to impose an RF voltage across the electrodes to produce a glow discharge in the space between the electrodes. A shield is provided surrounding the peripheral edges and the back of the second electrode, and this shield is spaced a substantial distance from the back of the electrode. Electrical insulating material is placed in the space between the shield and the back of the second electrode with a small gap between the electrical insulating material and the shield. The configuration of the shield, the insulating material, and the second electrode eliminates spurious sputtering from the peripheral and back regions of the second electrode so that very high power levels can be achieved and sputtering can be done very efficiently at high sputtering rates.

Abstract: A system for in situ plasma etch removal of deposition products that accumulate during device processing. An r.f. electrode is configured to removably fit coaxially within the chamber, a quartz tube. A chamber heater shield functions also as an r.f. return. Cleaning gas is introduced into the chamber and r.f. power supplied to the electrodes to initiate an r.f. plasma which etch cleans formations on the quartz tube walls. The deposition equipment is cleaned without the need for disassembly.