Abstract: A microsensor array system, comprising a pad, a plurality of actuators attached to the pad, and a plurality of microprobes, wherein substantially each microprobe in the plurality of microprobes is attached to a respective actuator in the plurality of actuators.

Abstract: One embodiment is a microprobe. An example of the microprobe comprises a housing having an aperture. This example of the microprobe also comprises an ISFET attached to the housing. The ISFET may have a gate located proximate the aperture. This example of the microprobe further comprises a reference electrode attached to the housing proximate the aperture. Another embodiment is a microsensor system. Another embodiment is a method for measuring a characteristic of tissue. Yet another condition embodiment is a method for monitoring tissue pH.

Abstract: One embodiment is a microprobe. An example of the microprobe comprises a housing having an aperture. This example of the microprobe also comprises an ISFET attached to the housing. The ISFET may have a gate located proximate the aperture. This example of the microprobe further comprises a reference electrode attached to the housing proximate the aperture. Another embodiment is a microsensor system. Another embodiment is a method for measuring a characteristic of tissue. Yet another embodiment is a method for monitoring tissue pH.

Abstract: An ion-sensitive sensor has an active layer of silicon with source and drain diffusion regions of a field-effect transistor formed therein, patterned layers of silicon oxide and metal on one side of the active silicon layer, and a layer of insulative support material on the metal and silicon oxide layers. A continuous layer of silicon oxide on the other side of the active silicon layer has an exposed surface in the region of the field-effect transistor so that surface charge is formed in the exposed area of the continuous silicon oxide layer when placed in contact with an electrolyte solution. The surface charge induces a channel in the undiffused channel region between the source and drain regions, enabling the flow of current between source and drain contacts under proper bias conditions.

Abstract: An ion-sensitive sensor has an active layer of silicon with source and drain diffusion regions of a field-effect transistor formed therein, patterned layers of silicon oxide and metal on one side of the active silicon layer, and a layer of insulative support material on the metal and silicon oxide layers. A continuous layer of silicon oxide on the other side of the active silicon layer has an exposed surface in the region of the field-effect transistor so that surface charge is formed in the exposed area of the continuous silicon oxide layer when placed in contact with an electrolyte solution. The surface charge induces a channel in the undiffused channel region between the source and drain regions, enabling the flow of current between source and drain contacts under proper bias conditions.

Abstract: A chemical sensor couples a material that changes temperature in response to a chemical condition with an oscillator. The oscillator is coupled to the material to detect the change in temperature in the material so that the frequency of the oscillator changes in correspondence with the change in temperature as an indication of the chemical condition.

Abstract: A method is described for fabricating a complementary, vertical bipolar sconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ silicon island by epitaxially growing an N-type silicon layer on the N+ silicon island. Then, a P region is created in the N-type silicon layer. An N+ region created in the P region completes the NPN junction device. Similarly, a PNP junction device is formed by epitaxially growing a P-type silicon layer on the P+ silicon island. Then, an N region is created in the P-type silicon layer. A P+ region created in the N region completes the PNP junction device.

Abstract: A method is described for fabricating a complementary, vertical bipolar semiconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ silicon island by epitaxially growing an N-type silicon layer on the N+ silicon island. Then, a P region is created in the N-type silicon layer. An N+ region created in the P region completes the NPN junction device. Similarly, a PNP junction device is formed by epitaxially growing a P-type silicon layer on the P+ silicon island. Then, an N region is created in the P-type silicon layer. A P+ region created in the N region completes the PNP junction device.

Abstract: A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer on a layer of low minority carrier lifetime silicon of a silicon-on-sapphire handle wafer and another layer of silicon dioxide on a layer of high minority carrier lifetime silicon of a bulk silicon device wafer. The silicon dioxide layers are placed in contact and annealed to form a bonded structure having an annealed layer of silicon dioxide. The layer of bulk silicon is then thinned. The thinned layer of bulk silicon and the annealed silicon dioxide layer are patterned by photolithography to form mesas of high minority carrier lifetime silicon and to expose regions of low minority carrier lifetime silicon on the bonded structure.

Abstract: A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer on a layer of low minority carrier lifetime silicon of a silicon-on-sapphire handle wafer and another layer of silicon dioxide on a layer of high minority carrier lifetime silicon of a bulk silicon device wafer. The silicon dioxide layers are placed in contact and annealed to form a bonded structure having an annealed layer of silicon dioxide. The layer of bulk silicon is then thinned. The thinned layer of bulk silicon and the annealed silicon dioxide layer are patterned by photolithography to form mesas of high minority carrier lifetime silicon and to expose regions of low minority carrier lifetime silicon on the bonded structure.

Abstract: A method of fabricating epitaxial thin films, such as doped films or silicon-on-sapphire films, relies upon ultrahigh vacuum vapor deposition. The method calls for a preparing of an ultrahigh vacuum chamber to reduce water and oxygen pressure to below 10.sup.-10 Torr. At at least one sapphire substrate is placed in the ultrahigh vacuum chamber and is purged in the chamber with about 600 sccm hydrogen for about 5 minutes. A silicon film or a doped film is deposited on the sapphire substrate at temperatures between about 700 and 850.degree. C. with base pressures between about 1.0 and 2.0.mu. and gas flow rates of about 2.0 sccm SiH.sub.4 and 20 sccm H.sub.2 for about 30 minutes to provide an about 1000 .ANG. thick silicon film, or, doped film, on the sapphire substrate.

Abstract: A process for recovering BF.sub.3 from a BF.sub.3 -promoter catalyzed .alpha.-olefin oligomerization process is disclosed wherein the oligomer reaction product is water washed to extract BF.sub.3 as its hydrate and any water soluble promoter and the water extract is distilled to remove components boiling below BF.sub.3 hydrate overhead leaving a residual product which is at least 50 weight percent BF.sub.3 in the form of BF.sub.3 hydrate.

Abstract: Boron trifluoride wash water from an olefin oligomerization process can be disposed of in an environmentally safe manner by hydrolysis to substantially eliminate fluoroborate anions (BF.sub.4 --), mixing with CaO or Ca(OH).sub.2 and concentration in any sequence followed by mixing with portland cement and solidification. The cured cement is highly resistant to aqueous leach of boron and fluorine containing products.

Abstract: Saturated hydrocarbon is transformed catalytically into olefinic hydrocarbon of corresponding skeletal configuration by reacting the saturated hydrocarbon with a suitable alkene cyclopentadienyl or alkene arene transition metal molecular complex, such as bis(ethylene)pentamethylcyclopentadienyliridium, bis(ethylene)pentamethylcyclopentadienylrhodium and bis(ethylene)hexamethylbenzene osmium in the presence of free alkene as hydrogen acceptor. The reaction may be performed photochemically under irradiation with ultraviolet light or it may be performed thermolytically under application of heat. The catalyst may be charged to the reaction as a preformed alkene cyclopentadienyl or alkene arene transition metal molecular complex or the catalyst may be formed in situ in the reaction mixture via displacement of ligand from a suitable transition metal complex containing the displaceable ligand, such as dicarbonylpentamethylcyclopentadienyliridium or cyclooctadienepentamethylcyclopentadienyliridium.

Abstract: Saturated hydrocarbon is transformed catalytically into olefinic hydrocarbon of corresponding skeletal configuration by reacting the saturated hydrocarbon with a suitable alkene cyclopentadienyl or alkene arene transition metal molecular complex, such as bis(ethylene)pentamethylcyclopentadienyliridium, in the presence of free alkene as hydrogen acceptor. The reaction may be performed photochemically under irradiation with ultraviolet light or it may be performed thermolytically under application of heat. The catalyst may be charged to the reaction as a preformed alkene cyclopentadienyl or alkene arene transition metal molecular complex or the catalyst may be formed in situ in the reaction mixture via displacement of ligand from a suitable transition metal complex containing the displaceable ligand, such as dicarbonylpentamethylcyclopentadienyliridium or cyclooctadienepentamethylcyclopentadienyliridium.