Patents by Inventor Hrant Sargsyan

Hrant Sargsyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • One-time programmable bitcell with diode under anti-fuse
    Patent number: 10529436
    Abstract: A one-time programmable memory device includes a first doped region in a semiconductor substrate, a second doped region implanted within the first doped region, and a gate positioned over the second doped region. The first doped region and second doped regions form a diode. A first contact is coupled to the first doped region for applying a voltage to the first doped region. The gate includes a dielectric portion that is capacitively coupled to the second doped region. The gate also includes a conductive portion that is coupled to a second contact for applying a voltage to the conductive portion. The voltage applied to the conductive portion is independent from the voltage applied to the first doped region. The memory device is programmed by forming a rupture in the dielectric portion of the gate.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: January 7, 2020
    Assignee: Synopsys, Inc.
    Inventors: Hrant Sargsyan, Andrew E. Horch