Patents by Inventor HRL LABORATORIES

HRL LABORATORIES has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140300431
    Abstract: A four port antenna decoupling network which has only two negative capacitors and four or more positive capacitors and a method of improving low frequency receiving performance of two element and four element antenna arrays using one or more wideband decoupling circuits wherein each of said wideband decoupling circuits contain a maximum of two non-Foster components, the two non-Foster components preferably simulating negative capacitors.
    Type: Application
    Filed: April 3, 2013
    Publication date: October 9, 2014
    Applicant: HRL LABORATORIES, LLC
    Inventor: HRL LABORATORIES, LLC
  • Publication number: 20140158987
    Abstract: An apparatus, system, and/or method are described to enable optically transparent reconfigurable integrated electrical components, such as antennas and RF circuits to be integrated into an optically transparent host platform, such as glass. In one embodiment, an Ag NW film may be configured as a transparent conductor for antennas and/or as interconnects for passive circuit components, such as capacitors or resistors. Ag NW may also be used as transmission lines and/or interconnect overlays for devices. A graphene film may also be configured as active channel material for making active RF devices, such as amplifiers and switches.
    Type: Application
    Filed: December 6, 2012
    Publication date: June 12, 2014
    Applicant: HRL LABORATORIES, LLC
    Inventor: HRL Laboratories, LLC
  • Publication number: 20130293435
    Abstract: An antenna array containing two or more radiating elements, with nearest neighbor radiating elements connected together with a non-Foster circuit at terminals of the radiating elements such that mutual reactance of the elements is reduced over a wider bandwidth than which would be obtained if the non-Foster circuits were omitted.
    Type: Application
    Filed: April 3, 2013
    Publication date: November 7, 2013
    Inventor: HRL LABORATORIES, LLC
  • Publication number: 20130119400
    Abstract: A method of fabricating a GaN HEMT includes growing a first epitaxial layer on a substrate, growing a second epitaxial layer on the first epitaxial layer, growing a third epitaxial layer on the second epitaxial layer, depositing a first dielectric film on the third epitaxial layer, using dielectric films to form a first sidewall dielectric spacer, forming a sidewall gate adjacent the first sidewall dielectric spacer. The sidewall gate may be made to be less than 50 nm in length.
    Type: Application
    Filed: December 28, 2012
    Publication date: May 16, 2013
    Applicant: HRL LABORATORIES
    Inventor: HRL LABORATORIES
  • Publication number: 20130087407
    Abstract: A membrane is disclosed. The membrane contains a first weight disposed at a center portion of the membrane, and a first hinge structure disposed away from the center portion of the membrane.
    Type: Application
    Filed: October 4, 2012
    Publication date: April 11, 2013
    Applicant: HRL LABORATORIES LLC
    Inventor: HRL Laboratories LLC