Patents by Inventor Hsein-chin CHIU

Hsein-chin CHIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High electron mobility transistor
    Patent number: 9627523
    Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.
    Type: Grant
    Filed: April 19, 2016
    Date of Patent: April 18, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Hsein-chin Chiu, Chien-Kai Tung, Heng-Kuang Lin, Chih-Wei Yang, Hsiang-Chun Wang
  • HIGH ELECTRON MOBILITY TRANSISTOR
    Publication number: 20160233326
    Abstract: A high electron mobility transistor comprises a substrate, an epitaxial stack arranged above the substrate and having a first region and a second region surrounding the first region, a matrix electrode structure arranged in the first region. The matrix electrode comprises a plurality of first electrodes arranged on the epitaxial stack, a plurality of second electrodes arranged on the epitaxial stack and adjacent to the plurality of first electrodes, a plurality of third electrodes arranged adjacent to the plurality of first electrodes and second electrodes. One of the plurality of first electrodes comprises a first side, a second side, a third side and a fourth side. The first side and the third side are opposite sides, and the second side and the fourth side are opposite sides. Two of the plurality of second electrodes are arranged on the first side and the third side, and two of the plurality of third electrodes are arranged on the second side and the fourth side.
    Type: Application
    Filed: April 19, 2016
    Publication date: August 11, 2016
    Inventors: Hsein-chin CHIU, Chien-Kai TUNG, Heng-Kuang LIN, Chih-Wei YANG, Hsiang-Chun WANG