Abstract: A first metal interconnection pattern is formed over a substrate. A spacer layer is selectively deposited on the exposed surfaces of the first metal interconnection pattern. Subsequently, a metal overburden layer is deposited on the spacer layer. The excess portion of the metal overburden layer is removed, i.e., that portion deposited over a top surface of the metal interconnection pattern and the spacer layer. This forms a second metal interconnection pattern. The elements of the second metal interconnection pattern are located between respective elements of the first metal interconnection pattern.

Abstract: A method for trench filling during integrated circuit manufacture is described in which the filled-in surface is dishing inhibited. To accomplish this an extra layer is introduced between the trench-defining mask material and the trench filler material. This transition layer is characterized by having a removal rate (under CMP) that is greater than that of both the mask material and the filler material. An important additional advantage is that end-point detection is now much easier because of the large difference in removal rates between the mask and transition layers.