Patents by Inventor HSI-DUNG LIN

HSI-DUNG LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10192687
    Abstract: The present disclosure provides a capacitor assembly having a non-symmetrical electrode structure and a capacitor seat structure thereof. The capacitor assembly includes a capacitor seat structure and a capacitor package structure. The capacitor seat structure includes a capacitor seat, a first electrode layer and a second electrode layer. The capacitor seat has a first through hole, a first groove, a second through hole and a second groove. The capacitor package structure includes a first conductive pin and a second conductive pin. The first conductive pin passes through the first through hole and is disposed inside the first groove to electrically contact the first electrode layer. The second conductive pin passes through the second through hole and is disposed inside the second groove to electrically contact the second electrode layer.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: January 29, 2019
    Assignee: APAQ TECHNOLOGY CO., LTD.
    Inventors: Ming-Tsung Chen, Hsi-Dung Lin, Ching-Feng Lin
  • Publication number: 20180269001
    Abstract: The present disclosure provides a capacitor assembly having a non-symmetrical electrode structure and a capacitor seat structure thereof. The capacitor assembly includes a capacitor seat structure and a capacitor package structure. The capacitor seat structure includes a capacitor seat, a first electrode layer and a second electrode layer. The capacitor seat has a first through hole, a first groove, a second through hole and a second groove. The capacitor package structure includes a first conductive pin and a second conductive pin. The first conductive pin passes through the first through hole and is disposed inside the first groove to electrically contact the first electrode layer. The second conductive pin passes through the second through hole and is disposed inside the second groove to electrically contact the second electrode layer.
    Type: Application
    Filed: July 10, 2017
    Publication date: September 20, 2018
    Inventors: MING-TSUNG CHEN, HSI-DUNG LIN, CHING-FENG LIN