Patents by Inventor HSI-HSIEN LIN

HSI-HSIEN LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11967613
    Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.
    Type: Grant
    Filed: May 16, 2023
    Date of Patent: April 23, 2024
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Ju-Hsien Lin, Jung-Tao Chung, Shu-Hsiao Tsai, Hsi-Tsung Lin, Chen-An Hsieh, Yi-Han Chen, Yao-Ting Shao
  • Publication number: 20190310253
    Abstract: A method for diagnosing complicated parapneumonic effusion is revealed. A sandwich enzyme-linked immunosorbent assay (ELISA) is used to measure a level of a target protein in a pleural effusion. Then the level is compared with a preset baseline corresponding to the target protein so as to determine whether the pleural effusion is a complicated parapneumonic effusion (CPPE). The target protein can be further used in combination with conventional CPPE biomarkers to improve sensitivity and specificity in clinical diagnosis of CPPE.
    Type: Application
    Filed: June 8, 2018
    Publication date: October 10, 2019
    Inventors: KUO-AN WU, CHIA-YU YANG, CHIH-CHING WU, HSI-HSIEN LIN