Abstract: Embodiments of the present disclosure relates to a method for forming a semiconductor device structure. The method includes including forming one or more conductive features in a first interlayer dielectric (ILD), forming an etch stop layer on the first ILD, forming a second ILD over the etch stop layer, forming one or more openings through the second ILD and the etch stop layer to expose a top surface of the one or more first conductive features, wherein the one or more openings are formed by a first etch process in a first process chamber, exposing the one or more openings to a second etch process in a second process chamber so that the shape of the or more openings is elongated, and filling the one or more openings with a conductive material.

Abstract: Provided is a post-treatment method and system for a core-shell catalyst, which relate to the field of fuel cell materials. The post-treatment method of the present disclosure includes the following steps: a core-shell catalyst is added into an electrolyte solution containing citric acid or ethylenediamine tetraacetic acid, a gas containing oxygen is introduced into the electrolyte solution followed by stirring for a predetermined reaction time, the open circuit potential of the reactor base is recorded during the reaction time, and the open circuit potential should stabilize at 0.90˜1.0 V vs. RHE when the reaction is completed. The molar ratio of citric acid or ethylenediamine tetraacetic acid to platinum of the core-shell catalyst is 10 to 1000:1. A percentage of oxygen in the gas is 10 to 100% by volume. The post-treatment method of the present disclosure can significantly improve the platinum mass activity and PGM mass activity and durability of core-shell catalyst.