Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: A method of detecting or monitoring process electrical charge produced during fabrication of an integrated circuit (IC) on a semiconductor wafer includes fabricating a process charge detection circuit on or in the semiconductor wafer, including: a victim isolation well, a gate oxide disposed on or in the victim isolation well, an aggressor isolation well electrically connected with the victim isolation well via the gate oxide, a victim antenna electrically connected with the victim isolation well and together with the victim isolation well defining a victim RC time constant, and an aggressor antenna electrically connected with the aggressor isolation well and together with the aggressor isolation well defining an aggressor RC time constant that is different from the victim RC time constant. Process charge is detected using the process charge detection circuit. The detecting comprises measuring an electrical parameter of the gate oxide.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well and doped regions. The substrate has heavily doped and lightly doped regions over the heavily doped region. The first wells are disposed in the lightly doped region and arranged as an array. The first wells have a conductive type opposite to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region, and has an active region defined by an isolation structure. The first wells are overlapped with the second well. Top ends of the first wells are lower than a bottom end of the second well. The doped regions are separately located in the active region, and have a conductive type opposite to a conductive type of the second well.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well and doped regions. The substrate has heavily doped and lightly doped regions over the heavily doped region. The first wells are disposed in the lightly doped region and arranged as an array. The first wells have a conductive type opposite to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region, and has an active region defined by an isolation structure. The first wells are overlapped with the second well. Top ends of the first wells are lower than a bottom end of the second well. The doped regions are separately located in the active region, and have a conductive type opposite to a conductive type of the second well.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well, and first and second doped regions. The substrate has heavily doped and lightly doped regions. The lightly doped region is disposed over the heavily doped region. The first well is disposed in the lightly doped region. The first well has a conductive type complementary to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region. A location of the first well overlaps a location of the second well. The first and the second doped regions are located in the second well within the active region, and spaced apart from each other. The first and the second doped regions have a same conductive type complementary to a conductive type of the second well.

Abstract: An IC structure includes a substrate, a deep n-well (DNW), a first device, a second device, a first electrical path and a second electrical path. The DNW is in the substrate. The first device is formed inside the DNW and connected to a first lower reference voltage and a first higher reference voltage. The second device is formed in the substrate and outside the DNW, and connected to a second lower reference voltage and a second higher reference voltage. The first electrical path is electrically connected between the first device and the second device. The second electrical path is electrically connected between the first lower reference voltage and the second lower reference voltage. A second metal layer that includes the second electrical path is located in an area outside of an area above a first metal layer in which the first electrical path is located.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well, and first and second doped regions. The substrate has heavily doped and lightly doped regions. The lightly doped region is disposed over the heavily doped region. The first well is disposed in the lightly doped region. The first well has a conductive type complementary to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region. A location of the first well overlaps a location of the second well. The first and the second doped regions are located in the second well within the active region, and spaced apart from each other. The first and the second doped regions have a same conductive type complementary to a conductive type of the second well.

Abstract: A package structure includes at least one semiconductor chip, an insulating encapsulation, and a redistribution circuit structure. The semiconductor chip has an active surface and connecting pads distributed thereon. The insulating encapsulation encapsulates the semiconductor chip. The redistribution circuit structure is disposed on and has at least one metallization layer with metal segments, wherein the redistribution circuit structure is electrically connected to the semiconductor chip through the at least one metallization layer and the connecting pads electrically connected thereto. A projection location of a first gap between any two most adjacent connecting pads of the connecting pads is partially overlapped with a projection location of a second gap between any two most adjacent metal segments of the metal segments of the at least one metallization layer in a vertical projection on the active surface of the at least one semiconductor chip.

Abstract: A package structure includes at least one semiconductor chip, an insulating encapsulation, and a redistribution circuit structure. The semiconductor chip has an active surface and connecting pads distributed thereon. The insulating encapsulation encapsulates the semiconductor chip. The redistribution circuit structure is disposed on and has at least one metallization layer with metal segments, wherein the redistribution circuit structure is electrically connected to the semiconductor chip through the at least one metallization layer and the connecting pads electrically connected thereto. A projection location of a first gap between any two most adjacent connecting pads of the connecting pads is partially overlapped with a projection location of a second gap between any two most adjacent metal segments of the metal segments of the at least one metallization layer in a vertical projection on the active surface of the at least one semiconductor chip.

Abstract: An IC structure is provided. The IC structure includes a P-type substrate, a deep N-well region in the substrate, a first N-well region on the deep N-well region, a first N-type doped region in the first N-well region, a second N-well region in the substrate, a first P-well region in the substrate, and a discharge circuit. The second N-well region and the first P-well region are separated from the deep N-well region. The discharge circuit includes a first P-type doped region in the first P-well region, a first PMOS transistor formed in the second N-well region, a first electrical path coupled between a source of the first PMOS transistor and the first N-type doped region, and a second electrical path coupled between a drain of the first PMOS transistor and the first P-type doped region.

Abstract: An integrated circuit (IC) structure is provided. The IC structure comprises a deep n-well (DWN), a first circuit, a second circuit, a first power line and a second power line. The first circuit is in the DWN. The second circuit is outside the DWN and electrically connected with the first circuit. The first power line is configured to provide the first circuit with power. The second power line is configured to provide the second circuit with power. The second power line is electrically connected with the first power line. The first power line and the second power line are in different conductive layers.

Abstract: An electronic device is disclosed that includes an output device and a detection circuit. The output device is coupled to an output pad, and is turned on according to a protection signal. The detection circuit is configured to detect a voltage level of a control node, to generate the protection signal based on the detected voltage level, and to switch the voltage level to a predetermined voltage level according to the detected voltage level.

Abstract: The semiconductor device for fabricating an IC is provided. The semiconductor device includes a deep n-well (DNW), a first inverter, a second inverter, an electrical path, and a charge-dispelling device. The DNW is formed in a substrate. The first inverter is formed inside the DNW. The second inverter is formed in the substrate and outside the DNW. The electrical path is arranged between the first inverter and the second inverter. The charge-dispelling device is connected between the ground of the first inverter and the ground of the second inverter to develop a bypass path. The impedance of the bypass path is lower than the impedance of the electrical path.

Abstract: An integrated circuit (IC) structure is provided. The IC structure comprises a deep n-well (DWN), a first circuit, a second circuit, a first power line and a second power line. The first circuit is in the DWN. The second circuit is outside the DWN and electrically connected with the first circuit. The first power line is configured to provide the first circuit with power. The second power line is configured to provide the second circuit with power. The second power line is electrically connected with the first power line. The first power line and the second power line are in different conductive layers.

Abstract: An electronic device is disclosed that includes an output device and a detection circuit. The output device is coupled to an output pad, and is turned on according to a protection signal. The detection circuit is configured to detect a voltage level of a control node, to generate the protection signal based on the detected voltage level, and to switch the voltage level to a predetermined voltage level according to the detected voltage level.

Abstract: A circuit that includes a first diode-connected dummy device, a second diode-connected dummy device, a third diode-connected dummy device, a fourth diode-connected dummy device, and a first discharge path. The second diode-connected dummy device connected in cascode with the first diode-connected dummy device. The fourth diode-connected dummy device connected in cascode with the third diode-connected dummy device. The first and the second diode-connected dummy devices are formed in a first region. The third and the fourth diode-connected dummy devices are formed in a second region which is outside the first region. The first discharge path configured to discharge charges from at least one of the first and the second diode-connected dummy devices in the first region to a reference voltage terminal of one of the third and the fourth diode-connected dummy devices in the second region.

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes: a substrate; a first region over the substrate, the first region comprising a first n type material; a second region over the substrate and laterally adjacent to the first region, the second region comprising a first p type material; a third region disposed within the second region and laterally separated from the first region, the third region comprising a second n type material; a fourth region disposed atop the third region, the fourth region comprising a second p type material; a fifth region disposed within the first region and laterally separated from the second region, the fifth region comprising a third p type material; and a sixth region disposed atop the fifth region, the sixth region comprising a third n type material.

Abstract: Methods and apparatus are disclosed for ESD protection circuits. An ESD protection circuit may comprise a first region of an n type material, a second region of a p type material adjacent to the first region, a third region of an n type material within the second region and separated from the first region, and a fourth region of a p type material within the third region. There may be multiple parts within the first region and the second region, made of different n type or p type materials. An ESD protection circuit may further comprise a fifth region of a p type material, contained within the first region.