Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: Disclosed is a pH-sensitive hyaluronic acid derivative, comprising at least one repeat unit as shown in the following formula (I), wherein HA represents a unit comprising N-acetyl-D-glucosamine and D-glucuronic acid, q represents an integer of 2 to 10,000; A represents a biocleavable linkage comprising at least one of hydrazone, acetal, ketal and imine; M represents at least one of a hydrophobic fragment, a hydrophilic fragment, and an amphiphilic fragment, and p represents the number of [A-M] directly grafted onto each HA unit, p represents an integer of 0 to 4, and the p of each HA unit is not 0 at the same time.