Patents by Inventor Hsian Wang
Hsian Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10978462Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The method includes forming a negative photoresist layer to cover the gate stack and a first portion of the conductive layer over the isolation structure and expose a second portion of the conductive layer. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over the second portion of the conductive layer and an edge portion of the negative photoresist layer, and a thickness of the edge portion decreases in a direction away from the gate stack.Type: GrantFiled: October 24, 2019Date of Patent: April 13, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Yen Hsaio, Cheng-Ming Wu, Shih-Lu Hsu, Chien-Hsian Wang
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Publication number: 20200058661Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The method includes forming a negative photoresist layer to cover the gate stack and a first portion of the conductive layer over the isolation structure and expose a second portion of the conductive layer. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over the second portion of the conductive layer and an edge portion of the negative photoresist layer, and a thickness of the edge portion decreases in a direction away from the gate stack.Type: ApplicationFiled: October 24, 2019Publication date: February 20, 2020Applicant: Taiwan Semiconductor Manufacturing Co., LtdInventors: Ching-Yen HSAIO, Cheng-Ming WU, Shih-Lu HSU, Chien-Hsian WANG
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Patent number: 10461088Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The semiconductor substrate has a first region and a second region isolated from each other by an isolation structure in the semiconductor substrate. The gate stack is formed over the first region. The method includes forming a negative photoresist layer over the first region and a first portion of the conductive layer over the isolation structure to cover the gate stack. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over a second portion of the conductive layer. The method includes removing the second portion through the trenches. The method includes removing the mask layer. The method includes removing the negative photoresist layer.Type: GrantFiled: March 30, 2018Date of Patent: October 29, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ching-Yen Hsaio, Cheng-Ming Wu, Shih-Lu Hsu, Chien-Hsian Wang
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Publication number: 20180226419Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a gate stack and a conductive layer over a semiconductor substrate. The semiconductor substrate has a first region and a second region isolated from each other by an isolation structure in the semiconductor substrate. The gate stack is formed over the first region. The method includes forming a negative photoresist layer over the first region and a first portion of the conductive layer over the isolation structure to cover the gate stack. The method includes forming a mask layer over the negative photoresist layer and the conductive layer. The mask layer has trenches over a second portion of the conductive layer. The method includes removing the second portion through the trenches. The method includes removing the mask layer. The method includes removing the negative photoresist layer.Type: ApplicationFiled: March 30, 2018Publication date: August 9, 2018Applicant: Taiwan Semiconductor Manufacturing Co., LtdInventors: Ching-Yen HSAIO, Cheng-Ming WU, Shih-Lu HSU, Chien-Hsian WANG
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Patent number: 9941294Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The first gate stack includes a first gate and a second gate over the first gate, and the first gate and the second gate are electrically isolated from each other. The semiconductor device structure includes a ring structure surrounding the first gate stack. The ring structure is made of a conductive material.Type: GrantFiled: August 21, 2015Date of Patent: April 10, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ching-Yen Hsaio, Cheng-Ming Wu, Shih-Lu Hsu, Chien-Hsian Wang
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Publication number: 20170053928Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first gate stack over the semiconductor substrate. The first gate stack includes a first gate and a second gate over the first gate, and the first gate and the second gate are electrically isolated from each other. The semiconductor device structure includes a ring structure surrounding the first gate stack. The ring structure is made of a conductive material.Type: ApplicationFiled: August 21, 2015Publication date: February 23, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ching-Yen HSAIO, Cheng-Ming WU, Shih-Lu HSU, Chien-Hsian WANG
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Patent number: 7663357Abstract: A signal readout circuit for amperometric sensor for reading a readout signal of a sensor includes an amplifier, a first transistor, a second transistor, and a first resistor. A negative input end of the amplifier receives an input voltage, and a positive input end of the amplifier is connected to a reference electrode of the sensor. Gates of the first transistor and the second transistor are connected to an output end of the amplifier, a drain of the first transistor is connected to a counter electrode of the sensor, and a drain of the second transistor is connected to the first resistor.Type: GrantFiled: November 27, 2007Date of Patent: February 16, 2010Assignee: Chung Yuan Christian UniversityInventors: Wen-Yaw Chung, Tsai-Tseng Kuo, Ying-Hsian Wang, Dorota Genowefa Pijanowska, Wladyslaw Torbicz
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Publication number: 20080169800Abstract: A signal readout circuit for amperometric sensor for reading a readout signal of a sensor includes an amplifier, a first transistor, a second transistor, and a first resistor. A negative input end of the amplifier receives an input voltage, and a positive input end of the amplifier is connected to a reference electrode of the sensor. Gates of the first transistor and the second transistor are connected to an output end of the amplifier, a drain of the first transistor is connected to a counter electrode of the sensor, and a drain of the second transistor is connected to the first resistor.Type: ApplicationFiled: November 27, 2007Publication date: July 17, 2008Inventors: Wen-Yaw Chung, Tsai-Tseng Kuo, Ying-Hsian Wang, Dorota Genowefa Pijanowska, Wladyslaw Torbicz
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Patent number: 4333184Abstract: This invention, is a multi-function closet stool, which can really serve the purpose of automatic timing, measuring pressure, flushing and saving water. When one sits on the seat of closet stool, the driving piece pulls the driving steel cable to make timing and piston assembly simultaneously actuate and control arm sandwich on top of a movable piece in the sleeve. When one discharges his urine and stands up, the rear part of seat of closet stool will rebound promptly by the spring; meanwhile, the timing unit begins to count time, then, the driving arm makes the control arm release the movable piece in the sleeve by means of the pulling of timing unit and move upwards by the elasticity of spring. A rubber ring compresses air in the sleeve, the high velocity air will instantly rush in air container through a hole passage, pipe joint, filter and pipe. The air will open a movable lid for the purpose of water-flushing.Type: GrantFiled: March 21, 1980Date of Patent: June 8, 1982Inventor: Hsian Wang