Abstract: A medical device is provided. The medical device includes a shaft motor, a parallel manipulator and a shaft coupling. The shaft motor is configured to generate a mechanical force for manipulating a surgical tool. The parallel manipulator includes an end platform used to support the surgical tool, a base platform used to support the shaft motor and a plurality of limbs coupled between the end platform and the base platform. The limbs are configured to control movement of the end platform. The shaft coupling has a first end coupled to the surgical tool and a second end coupled to the shaft motor. The first end is swingable with respect to the second end along a direction, and the shaft coupling is configured to transfer the mechanical force to the surgical tool.

Abstract: Systems, methods, and devices are described herein for generating a pulse width modulation (PWM) signal having a specific duty cycle. In one embodiment, the system includes a square wave generator and a logic device. The square wave generator is configured to delay a input square wave signal to generate a plurality of square wave signals. The logic device is configured to perform a logic operation to two of square wave signals of the plurality of square wave signals, which in turn generates the PWM signal having a duty cycle corresponding to the two square wave signals.

Abstract: A medical device is provided. The medical device includes a shaft motor, a parallel manipulator, a receiving yoke, a runner and a transmission yoke. The shaft motor is configured to generate a mechanical force for manipulating a surgical tool. The parallel manipulator includes an end platform used to support the surgical tool, a base platform used to support the shaft motor and a plurality of limbs coupled between the end platform and the base platform. The limbs are configured to control movement of the end platform. The receiving yoke is coupled to the surgical tool. The runner is slidingly engaged to the shaft motor and configured to receive the mechanical force. The transmission yoke is coupled to the runner and the receiving yoke, and the transmission yoke is configured to transfer the mechanical force to the receiving yoke.

Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Abstract: Systems, devices, and methods are described herein for aligning a phase of a ring oscillator and removing jitter. An oscillator includes a resistor bank array, an operational amplifier, a first and second transistor, and a realignment circuit. The resistor bank array has a plurality of resistors configured to generate a first signal. The operational amplifier is coupled to a PLL circuit and is configured to compare a voltage of the PLL circuit with a voltage of the resistor bank array. The first transistor is coupled between the operational amplifier and a ring oscillator. The first transistor is configured to generate a second signal to control a frequency of the ring oscillator during a realignment state. The realignment circuit is coupled to the first transistor and the ring oscillator. The realignment circuit is configured to generate a realignment signal to align the ring oscillator with a first clock signal.

Abstract: Systems and methods are provided for a phase locked loop. A phase/frequency detector is configured to receive a reference signal and a feedback signal. A charge pump is configured to receive outputs from the phase/frequency detector and to generate pulses. An oscillator is configured to generate an output waveform based on the charge pump pulses. A realignment path is configured to generate a clock realignment signal that is provided to the oscillator based on the outputs from the phase/frequency detector.

Abstract: A circuit includes a first power node having a first voltage level, a second power node having a second voltage level different from the first voltage level, a reference node having a reference voltage level, a master latch that outputs a first bit based on a received bit, a slave latch that outputs a second bit based on the first bit and an output bit based on a selected one of the first bit or a third bit, a first level shifter that outputs the third bit based on a complementary bit pair, and a retention latch including a second level shifter and a pair of inverters that outputs the complementary bit pair based on the second bit. The slave latch and the first level shifter are coupled between the first power and reference nodes, and the retention latch is coupled between the second power and reference nodes.

Abstract: An on-chip heater in a concentric rings configuration having non-uniform spacing between heating elements provides improved radial temperature uniformity and low power consumption compared to circular or square heating elements. On-chip heaters are suitable for integration and use with on-chip sensors that require tight temperature control.

Abstract: A logic circuit (for providing a multibit flip-flop (MBFF) function) includes: a first inverter to receive a clock signal and generate a corresponding clock_bar signal; a second inverter to receive the clock_bar signal and generate a corresponding clock_bar_bar signal; a third inverter to receive a control signal and generate a corresponding control_bar signal; and a series-chain of 1-bit transfer flip-flop (TXFF) circuits, each including: a NAND circuit to receive data signals; and a 1-bit transmit gate flip-flop (TGFF) circuit to output signals Q and q, and receive an output of the NAND circuit, the signal q from the TGFF circuit of a preceding TXFF circuit in the series-chain, the clock_bar and clock_bar_bar signals, and the control and control_bar signals; and the first transfer TXFF circuit in the series-chain being configured to receive a start signal in place of the signal q from an otherwise preceding TGFF circuit.

Abstract: A driving assembly and a transfer device to allow an adjustable length of wheelbase for varying sizes of loads comprises a driving device, a driving wheel connected to the driving device rotatable by the driving device, a cantilever assembly comprising a cantilever configured for mounting to the bearing platform, and a driven wheel rotatably connected to one end of the cantilever. The other end of the cantilever is detachably connected to a fixed part of the driving device. The transfer device comprises a bearing platform and two driving assemblies.

Abstract: A circuit includes a multi-bit flip flop, an integrated clock gating circuit connected to the multi-bit flip flop, and a control circuit connected to the integrated clock gating circuit and the multi-bit flip flop. The control circuit compares output data of the multi-bit flip flop corresponding to input data with the input data. The control circuit generates an enable signal based on comparing the output data of the multi-bit flip flop corresponding to the input data with the input data of the multi-bit flip flop. The control circuit provides the enable signal to the integrated clock gating circuit, wherein the integrated clock gating circuit provides, based on the enable signal, a clock signal to the multi-bit flip flop causing the multi-bit flip flop to toggle.

Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.

Abstract: A semiconductor device includes a transistor comprising: a plurality of layers, wherein each of the plurality of layers has at least one Group III-V compound material; a gate electrode operatively coupled to at least one of the plurality of layers; a source electrode disposed on a first side of the gate electrode; a drain electrode disposed on a second side of the gate electrode; a field plate disposed between the gate electrode and the drain electrode; and a plurality of conductive lines disposed above the gate electrode, the source electrode, and the drain electrode. The semiconductor device further includes a plurality of test structures, wherein each of the test structures, including a first metal pattern and a second metal pattern, emulates at least one of the gate electrode, the source electrode, the drain electrode, the field plate, or at least one of the plurality of conductive lines.

Abstract: Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.

Abstract: A semiconductor device comprises an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction. A source region and a drain region are disposed in the active area, and are spaced apart along the channel direction. A channel is disposed in the active area and is interposed between the source region and the drain region. The channel comprises a two-dimensional electron gas (2DEG). A gate line is oriented along the transverse direction and is disposed on the channel and has a gate width in the channel direction. The gate line comprises gate material. A gate line terminus is disposed at each end of the gate line. Each gate line terminus comprises the gate material. Each gate line terminus has a width in the channel direction that is at least 1.2 time the gate width.

Abstract: A front light module applied to full lamination includes a display, a front light guide plate, a light-emitting unit, a transparent medium, and a cover layer. The front light guide plate is located over the display and includes a micro-structure. The micro-structure is recessed from an upper surface of the front light guide plate. The light-emitting unit is adjacent to the front light guide plate. The transparent medium is located over the front light guide plate. A space is located between the front light guide plate and the transparent medium. The cover layer is located over the transparent medium.

Abstract: A structure includes a first conductive feature in a first dielectric layer; a second dielectric layer over the first dielectric layer; and a second conductive feature extending through the second dielectric layer to physically contact the first conductive feature, wherein the second conductive feature includes a metal adhesion layer over and physically contacting the first conductive feature; a barrier layer extending along sidewalls of the second dielectric layer; and a conductive filling material extending over the metal adhesion layer and the barrier layer, wherein a portion of the conductive filling material extends between the barrier layer and the metal adhesion layer.

Abstract: A photonic integrated circuit includes a substrate, an interconnection layer, and a plurality of silicon waveguides. The interconnection layer is over the substrate. The interconnection layer includes a seal ring structure and an interconnection structure surrounded by the seal ring structure. The seal ring structure has at least one recess from a top view. The recess concaves towards the interconnection structure. The silicon waveguides are embedded in the substrate.

Abstract: A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.