Abstract: A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.

Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.

Abstract: An optical device package is provided. The optical device package includes a sensor and a light-transmitting region. The sensor includes a sensing region. The light-transmitting region is at least partially in the sensor, and the light-transmitting region allows an external light to transmit therethrough and reach the sensing region. A width of the light-transmitting region adjacent to a level of the sensing region is equal to or smaller than a width of the sensing region.

Abstract: An optical device includes an optical component and an electrical component. The optical component has a sensing surface and a backside surface opposite to the sensing surface. The electrical component is disposed adjacent to the backside surface of the optical component and configured to support the optical component. A portion of the backside surface of the optical component is exposed from the electrical component.

Abstract: A patch is provided. The patch comprises: a base layer; and an adhesive layer formed on a surface of the base layer, the adhesive layer has a wave pattern such that 95% or less of the area of the surface of the base layer is covered by the adhesive of the adhesive layer, wherein, the patch has an elongation of at least 120% in both machine direction and cross-machine direction.

Abstract: An ear physiological wearable device, including a main body and a supporting body, is provided. The main body includes an acoustic driving portion, a temperature sensing portion and an optical scanning portion. The acoustic driving portion is adjacent to the temperature sensing portion, and the optical scanning portion is disposed below the acoustic driving portion and the temperature sensing portion. The supporting body is connected to the main body. The acoustic driving portion includes an acoustic outlet, and the temperature sensing portion includes a nozzle. Two ear physiological wearable devices, one of them including an acoustic driving portion with an acoustic end against the user's skull, another including a main body including a temperature sensing portion and an optical scanning portion, are provided. In this way, the audio signal can be transmitted and/or the users' physiological status can be sensed.