Abstract: A semiconductor device includes a first gate structure disposed on a substrate and extending in a first direction. The first gate structure includes a first gate electrode, a first cap insulating layer disposed over the first gate electrode, first sidewall spacers disposed on opposing side faces of the first gate electrode and the first cap insulating layer and second sidewall spacers disposed over the first sidewall spacers. The semiconductor device further includes a first protective layer formed over the first cap insulating layer, the first sidewall spacers and the second sidewall spacers. The first protective layer has a ?-shape having a head portion and two leg portions in a cross section along a second direction perpendicular to the first direction.

Abstract: The present disclosure is directed to a semiconductor device. The semiconductor device includes a substrate, an insulating layer disposed on the substrate, a first conductive feature disposed in the insulating layer, and a capacitor structure disposed on the insulating layer. The capacitor structure includes a first electrode, a first dielectric layer, a second electrode, a second dielectric layer, and a third electrode sequentially stacked. The semiconductor device also includes a first via connected to the first electrode and the third electrode, a second via connected to the second electrode, and a third via connected to the first conductive feature. A part of the first via is disposed in the insulating layer. A portion of the first conductive feature is directly under the capacitor structure.

Abstract: A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.

Abstract: A semiconductor device package includes a first substrate, a second substrate, an electrical contact and a support element. The first substrate has a first surface. The second substrate has a first surface facing the first surface of the first substrate. The electrical contact is disposed between the first substrate and the second substrate. The support element is disposed between the first substrate and the second substrate. The support element includes a thermosetting material.

Abstract: A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.

Abstract: An integrated circuit includes a stacked MIM capacitor and a thin film resistor and methods of fabricating the same are disclosed. A capacitor bottom metal in one capacitor of the stacked MIM capacitor and the thin film resistor are substantially at the same layer of the integrated circuit, and the capacitor bottom metal and the thin film resistor are also made of substantially the same materials. The integrated circuit with both of a stacked MIM capacitor and a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

Abstract: An integrated circuit includes a stacked MIM capacitor and a thin film resistor and methods of fabricating the same are disclosed. A capacitor bottom metal in one capacitor of the stacked MIM capacitor and the thin film resistor are substantially at the same layer of the integrated circuit, and the capacitor bottom metal and the thin film resistor are also made of substantially the same materials. The integrated circuit with both of a stacked MIM capacitor and a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

Abstract: A hinge is mounted between a cover and a base of an electronic device. A lid covers the hinge and is attached securely to the base. The hinge has an arced surface and a rotating shaft. When the cover is pivoted to a certain angle, the rotating shaft abuts the arced surface to lift up the cover so the cover is selectively distant away from the lid. Therefore, the shape of the electronic device does not need to be disfigured and the cover still does not bump against the lid.

Abstract: A hinge is mounted between a cover and a base of an electronic device. A lid covers the hinge and is attached securely to the base. The hinge has two tilting brackets, two tilting shafts, two linking assemblies and two actuating washers. Each tilting bracket has a mounting wing with an elongated hole and a mounting hole and a connecting wing with an abutting surface. The tilting shafts are mounted movably through the elongated holes. Each linking assembly has an actuating seat mounted around the tilting shaft, a holding seat formed on the actuating seat and protruding into the mounting hole and a resilient element mounted in the mounting hole and pressing against the holding seat. The actuating washers are mounted securely around the tilting shafts and selectively abut the abutting surfaces of the connecting wings to lift up the cover.

Abstract: A hinge is mounted between a cover and a base of an electronic device. A lid covers the hinge and is attached securely to the base. The hinge has two tilting brackets, two tilting shafts, two linking assemblies and two actuating washers. Each tilting bracket has a mounting wing with an elongated hole and a mounting hole and a connecting wing with an abutting surface. The tilting shafts are mounted movably through the elongated holes. Each linking assembly has an actuating seat mounted around the tilting shaft, a holding seat formed on the actuating seat and protruding into the mounting hole and a resilient element mounted in the mounting hole and pressing against the holding seat. The actuating washers are mounted securely around the tilting shafts and selectively abut the abutting surfaces of the connecting wings to lift up the cover.