Patents by Inventor HSIANG-CHI HUANG

HSIANG-CHI HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230275088
    Abstract: An integrated circuit structure includes a first transistor, a second transistor, a first conductive via, a second conductive via, and a connection line. The first transistor includes a first active region, a first gate electrode over the first active region; and a first channel in the first active region and under the first gate electrode. The second transistor includes a second active region, a second gate electrode over the second active region, and a second channel in the second active region and under the second gate electrode. The first conductive via is electrically connected to the first gate electrode. The second conductive via is electrically connected to the second gate electrode. The connection line electrically connects the first and second conductive vias. The first transistor and the first conductive via and the second transistor and the second conductive via are arranged mirror-symmetrically with respect to a symmetry plane.
    Type: Application
    Filed: May 4, 2023
    Publication date: August 31, 2023
    Inventors: WEI-LING CHANG, LEE-CHUNG LU, XIANGDONG CHEN, KAM-TOU SIO, HSIANG-CHI HUANG
  • Patent number: 11682671
    Abstract: An integrated circuit structure includes a first transistor, a second transistor, a first conductive via, a second conductive via, and a connection line. The first transistor includes a first active region, a first gate electrode over the first active region; and a first channel in the first active region and under the first gate electrode. The second transistor includes a second active region, a second gate electrode over the second active region, and a second channel in the second active region and under the second gate electrode. The first conductive via is electrically connected to the first gate electrode. The second conductive via is electrically connected to the second gate electrode. The connection line electrically connects the first and second conductive vias. The first transistor and the first conductive via and the second transistor and the second conductive via are arranged mirror-symmetrically with respect to a symmetry plane.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Ling Chang, Lee-Chung Lu, Xiangdong Chen, Kam-Tou Sio, Hsiang-Chi Huang
  • Publication number: 20140335242
    Abstract: Disclosed are an automatic cocktail machine and an automatic cocktail making method. Water, a carbonic acid gas cylinder and a plurality of cocktail materials are inputted. After a user's cocktail request is received, the cocktail request is compared with a list to determine the requested cocktail and read the cocktail recipe correspondingly. A bartending module is provided for adjusting and mixing water and the carbonic acid gas according to the cocktail recipe to form a carbonated water, and adjusted to a recipe temperature. An output module is provided for mixing an appropriate quantity of cocktail materials with the carbonic acid gas cylinder to output the cocktail. With this simple and convenient automatic cocktail machine, the users can get various cocktails quickly and enjoy different delicious cocktails.
    Type: Application
    Filed: May 13, 2013
    Publication date: November 13, 2014
    Inventor: HSIANG-CHI HUANG