Abstract: A metal-oxide semiconductor field-effect transistor with asymmetric parallel dies and a method of using the same, including an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor produces a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.

Abstract: A circuit and a method for improving efficiency by use of external inductor for temperature control, wherein the operating temperature of a field effect transistor is calculated by the inductor voltage. The change in operating temperature is used to adjust and control the voltage of the variable voltage gate drive module. When the operating temperature rises, the input voltage of the gate increases accordingly; when the operating temperature decreases, the input voltage of the gate decreases accordingly, thereby achieving the efficiency of regulating light and heavy loads.

Abstract: A packaging structure with a magnetocaloric material, comprising a substrate, a plurality of electrical connection structures, a die, and a sealing compound. A magnetocaloric material is added to the substrate. The die is electrically connected to the substrate through the electrical connection structures, and then encapsulated with the sealing compound. When the packaging structure is turned on, the magnetocaloric material in the substrate creates a magnetocaloric effect, which can not only take away the temperature of the packaging structure through magnetic refrigeration, but also increase the temperature difference between the packaging structure and the outside, thereby improving the efficiency of heat dissipation.

Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.

Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load. The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.

Abstract: A metal-oxide semiconductor field-effect transistor with asymmetric parallel die and an implementation method thereof, comprising an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor can produce a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.

Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load, The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.

Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.