Patents by Inventor Hsiang-Fu Chen

Hsiang-Fu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12257602
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: March 25, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: I-Hsuan Chiu, Chia-Ming Hung, Li-Chun Peng, Hsiang-Fu Chen
  • Publication number: 20250061260
    Abstract: An integrated circuit includes a plurality of routing lines extending along a first direction, the plurality of routing lines being separated in the first direction by integral multiples of a nominal minimum pitch. The integrated circuit includes a plurality of standard cells, at least one of the plurality of standard cells having a first boundary coinciding with a routing line of the plurality of routing lines, and a second boundary offset from each of the plurality of routing lines.
    Type: Application
    Filed: November 5, 2024
    Publication date: February 20, 2025
    Inventors: Shang-Chih HSIEH, Chun-Fu CHEN, Ting-Wei CHIANG, Hui-Zhong ZHUANG, Hsiang-Jen TSENG
  • Publication number: 20250058353
    Abstract: A micro-electromechanical-system (MEMS) device may include a capacitive micromachined ultrasonic transducer (CMUT) that includes an actuation membrane and a sensing dielectric layer that are spaced apart by a cavity. The sensing dielectric layer may be formed such that the thickness of the sensing dielectric layer may extend the operational of the CMUT while enabling the CMUT to accommodate a sufficiently high direct current voltage bias for collapsed mode operation. In this way, the thickness of the sensing dielectric layer enables the CMUT to operate in the collapsed mode, which enables the CMUT to achieve greater sound pressure output relative to other operational modes and enables the frequency response of the CMUT to be adjustable, thereby enabling the frequency response to be optimized for specific use cases and applications.
    Type: Application
    Filed: August 16, 2023
    Publication date: February 20, 2025
    Inventors: Chia-Ming HUNG, Wen-Chuan TAI, Chun-Heng CHEN, Shao-Da WANG, Hsiang-Fu CHEN
  • Patent number: 12215016
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.
    Type: Grant
    Filed: August 7, 2023
    Date of Patent: February 4, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fan Hu, Chun-Ren Cheng, Hsiang-Fu Chen, Wen-Chuan Tai
  • Patent number: 12162749
    Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: December 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kang-Yi Lien, I-Hsuan Chiu, Yi-Chieh Huang, Chia-Ming Hung, Kuan-Chi Tsai, Hsiang-Fu Chen
  • Publication number: 20240395897
    Abstract: A method of manufacturing a semiconductor device includes forming a conductive layer over a first substrate, forming at least one circuit element at least partially from a semiconductor material of a second substrate, bonding the first substrate to the second substrate, etching a through via extending through the second substrate to partially expose the conductive layer, depositing at least one conductive material in the through via to form a conductive through via electrically coupled to the conductive layer and over the second substrate to form a first contact structure electrically coupling the conductive through via to the at least one circuit element. The at least one circuit element includes at least one of a Schottky diode, a capacitor, or a resistor.
    Type: Application
    Filed: July 31, 2024
    Publication date: November 28, 2024
    Inventors: Chia-Ming HUNG, I-Hsuan CHIU, Hsiang-Fu CHEN, Kang-Yi LIEN, Chu-Heng CHEN
  • Publication number: 20240383005
    Abstract: A semiconductor device and method of manufacturing the device that includes a capacitive micromachined ultrasonic transducer (CMUT). The CMUT includes an integrated circuit substrate, and a sensing electrode positioned on the integrated substrate. The sensing electrode includes a sidewall that forms a wall of an isolation trench adjacent to the sensing electrode, and is patterned before covering dielectric layers are deposited. After patterning of the sensing electrode, one or more dielectric layers are patterned, with one dielectric layer patterned on the sensing electrode and sidewall, and which has a thickness corresponding to the surface roughness of the sensing electrode. The CMUT further includes a membrane positioned above the sensing electrode forming a cavity therein.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Inventors: Kang-Yi Lien, Kuan-Chi Tsai, Yi-Chieh Huang, Wei-Tung Huang, Hsiang-Fu Chen
  • Publication number: 20240375943
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.
    Type: Application
    Filed: July 25, 2024
    Publication date: November 14, 2024
    Inventors: Wen-Chuan Tai, Hsiang-Fu Chen, Chia-Ming Hung, I-Hsuan Chiu, Fan Hu
  • Publication number: 20240304580
    Abstract: A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.
    Type: Application
    Filed: May 14, 2024
    Publication date: September 12, 2024
    Inventors: WEN-CHUAN TAI, FAN HU, HSIANG-FU CHEN, LI-CHUN PENG
  • Patent number: 12015001
    Abstract: A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: June 18, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wen-Chuan Tai, Fan Hu, Hsiang-Fu Chen, Li-Chun Peng
  • Publication number: 20240038597
    Abstract: A method and a system for detecting a semiconductor device are provided. The method comprises obtaining an image of the semiconductor device, evaluating a feature of the image, detecting a defect of the semiconductor device based on the feature, extracting a defect information for the defect, calculating a defect die ratio (DDR) in response to the defect and analyzing a relation between the DDR and the defect information.
    Type: Application
    Filed: July 28, 2022
    Publication date: February 1, 2024
    Inventors: FAN HU, WEN-CHUAN TAI, HSIANG-FU CHEN, I-CHIEH HUANG, TZU-CHIEH WEI, KANG-YI LIEN
  • Patent number: 11851323
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A first cavity and a second cavity are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a first movable membrane overlying the first cavity and a second movable membrane overlying the second cavity. A first functional structure overlies the first movable membrane, where the first functional structure comprises a first material having a first chemical composition.
    Type: Grant
    Filed: June 22, 2020
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Fu Chen, Chia-Ming Hung, I-Hsuan Chiu
  • Publication number: 20230406695
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A first cavity and a second cavity are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a first movable membrane overlying the first cavity and a second movable membrane overlying the second cavity. A first functional structure overlies the first movable membrane, where the first functional structure comprises a first material having a first chemical composition.
    Type: Application
    Filed: August 4, 2023
    Publication date: December 21, 2023
    Inventors: Hsiang-Fu Chen, Chia-Ming Hung, I-Hsuan Chiu
  • Publication number: 20230399226
    Abstract: The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.
    Type: Application
    Filed: June 8, 2022
    Publication date: December 14, 2023
    Inventors: Fan Hu, Wen-Chuan Tai, Li-Chun Peng, Hsiang-Fu Chen, Ching-Kai Shen, Hung-Wei Liang, Jung-Kuo Tu
  • Patent number: 11834325
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.
    Type: Grant
    Filed: June 15, 2022
    Date of Patent: December 5, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fan Hu, Chun-Ren Cheng, Hsiang-Fu Chen, Wen-Chuan Tai
  • Patent number: 11834332
    Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: December 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kang-Yi Lien, Kuan-Chi Tsai, Yi-Chieh Huang, Hsiang-Fu Chen, Chia-Ming Hung, I-Hsuan Chiu
  • Publication number: 20230386948
    Abstract: A semiconductor device and method of forming such a device includes a MEMS component including one or more MEMS pixels and having a MEMS membrane substrate and a MEMS sidewall. The semiconductor device includes an analog circuit component bonded to the MEMS component, and which includes at least one analog CMOS component within an analog circuit insulative layer, and an analog circuit component substrate. The semiconductor device includes an HPC component bonded to the analog circuit component substrate. The HPC component includes at least one HPC metal component disposed within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the at least one bond pad and the at least one HPC metal component, and an HPC substrate. Additionally, the semiconductor device includes a DTC component bonded to the HPC substrate, and which includes a DTC die disposed in a DTC substrate.
    Type: Application
    Filed: May 25, 2022
    Publication date: November 30, 2023
    Inventors: You-Ru Lin, Sheng Kai Yeh, Jen-Yuan Chang, Chi-Yuan Shih, Chia-Ming Hung, Hsiang-Fu Chen, Shih-Fen Huang
  • Publication number: 20230382724
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.
    Type: Application
    Filed: May 26, 2022
    Publication date: November 30, 2023
    Inventors: Wen-Chuan Tai, Hsiang-Fu Chen, Chia-Ming Hung, I-Hsuan Chiu, Fan Hu
  • Publication number: 20230382723
    Abstract: A semiconductor device and method of manufacturing the device that includes a growth die and a dummy die. The method includes patterning, on an integrated circuit wafer, at one least growth die, and patterning at least one dummy die that is positioned on at least a portion of a circumference of the integrated circuit wafer. The patterned growth and dummy dies are etched on the wafer. A bond wave is initiated at a starting point on the integrated circuit wafer. The starting point is positioned on an edge of the integrated circuit wafer opposite the portion on which the at least one dummy die is patterned. Upon application of pressure at the starting point, a uniform bond wave propagates across the wafers, bonding the two wafers together.
    Type: Application
    Filed: August 9, 2023
    Publication date: November 30, 2023
    Inventors: Kang-Yi Lien, I-Hsuan Chiu, Yi-Chieh Huang, Chia-Ming Hung, Kuan-Chi Tsai, Hsiang-Fu Chen
  • Publication number: 20230373780
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 23, 2023
    Inventors: Fan Hu, Chun-Ren Cheng, Hsiang-Fu Chen, Wen-Chuan Tai