Patents by Inventor Hsiang-Jen Tseng

Hsiang-Jen Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180350743
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated circuit. The method is performed by forming a gate structure over a substrate, and selectively implanting the substrate according to the gate structure to form first and second source/drain regions on opposing sides of the gate structure. A first MEOL structure is formed on the first source/drain region and a second MEOL structure is formed on the second source/drain region. The first MEOL structure has a bottommost surface that extends in a first direction from directly over the first source/drain region to laterally past an outermost edge of the first source/drain region. A conductive structure is formed to contact the first MEOL structure and the second MEOL structure. The conductive structure laterally extends from directly over the first MEOL structure to directly over the second MEOL structure along a second direction perpendicular to the first direction.
    Type: Application
    Filed: August 8, 2018
    Publication date: December 6, 2018
    Inventors: Ni-Wan Fan, Ting-Wei Chiang, Cheng-I Huang, Jung-Chan Yang, Hsiang-Jen Tseng, Lipen Yuan, Chi-Yu Lu
  • Patent number: 10128234
    Abstract: A semiconductor device includes first and second transistors, a pair of first source/drain regions, a pair of second source/drain regions, and a cell. Each of the first source/drain regions corresponds to a first source/drain terminal of a respective one of the first and second transistors. Each of the second source/drain regions corresponds to a second source/drain terminal of a respective one of the first and second transistors. The cell includes a first voltage rail, a pair of second voltage rails, and a cell circuit. The first voltage rail is coupled to the first source/drain regions. Each of the second voltage rails is coupled to a respective one of the second source/drain regions and is configured to be coupled to the first voltage rail. The cell circuit is coupled to one of the second voltage rails.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: November 13, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ni-Wan Fan, Sheng-Hsiung Chen, Cheng-I Huang, Jung-Chan Yang, Hsiang-Jen Tseng, Chi-Yu Lu
  • Publication number: 20180145070
    Abstract: A semiconductor device includes first and second transistors, a pair of first source/drain regions, a pair of second source/drain regions, and a cell. Each of the first source/drain regions corresponds to a first source/drain terminal of a respective one of the first and second transistors. Each of the second source/drain regions corresponds to a second source/drain terminal of a respective one of the first and second transistors. The cell includes a first voltage rail, a pair of second voltage rails, and a cell circuit. The first voltage rail is coupled to the first source/drain regions. Each of the second voltage rails is coupled to a respective one of the second source/drain regions and is configured to be coupled to the first voltage rail. The cell circuit is coupled to one of the second voltage rails.
    Type: Application
    Filed: November 18, 2016
    Publication date: May 24, 2018
    Inventors: Ni-Wan Fan, Sheng-Hsiung Chen, Cheng-I Huang, Jung-Chan Yang, Hsiang-Jen Tseng, Chi-Yu Lu
  • Publication number: 20180138171
    Abstract: Semiconductor structures and methods for forming a semiconductor structure are provided. A first active semiconductor region is disposed in a first vertical level of the semiconductor structure. A second active semiconductor region is disposed in the first vertical level, where the second active semiconductor region is separated from the first active semiconductor region by a distance in a first direction. A first conductive structure is disposed in a second vertical level that is adjacent to the first vertical level. The first conductive structure extends along the first direction and electrically couples the first active semiconductor region to the second active semiconductor region.
    Type: Application
    Filed: November 17, 2016
    Publication date: May 17, 2018
    Inventors: Ni-Wan Fan, Jung-Chan Yang, Hsiang-Jen Tseng, Tommy Hu, Chi-Yu Lu, Wei-Ling Chang
  • Publication number: 20180108635
    Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a semiconductor substrate, and an inter-tier interconnecting structure disposed within the semiconductor substrate. The inter-tier interconnect structure includes a first connection point at a lower surface of the inter-tier interconnecting structure and a second connection point at an upper surface of the inter-tier interconnecting structure. The first connection point and the second connection point are not vertically aligned. The inter-tier interconnecting structure includes one or more conductive layers extending between the first and second connection points.
    Type: Application
    Filed: December 19, 2017
    Publication date: April 19, 2018
    Inventors: Hsiang-Jen Tseng, Wei-Yu Chen, Ting-Wei Chiang, Li-Chun Tien
  • Publication number: 20180076190
    Abstract: A semiconductor device includes an array of Engineering Change Order (ECO) cells. Each of the ECO cells in the array includes a first metal pattern and a second metal pattern. Each of the ECO cells in the array further includes a plurality of active area patterns isolated from each other and arranged between the first and second metal patterns. Each of the ECO cells in the array further includes a first central metal pattern overlapping the first metal pattern. Each of the ECO cells in the array further includes a via electrically connecting the first central metal pattern to the first metal pattern. The plurality of active area patterns is arranged symmetrically about the first central metal pattern.
    Type: Application
    Filed: November 16, 2017
    Publication date: March 15, 2018
    Inventors: Li-Chun TIEN, Ya-Chi CHOU, Hui-Zhong ZHUANG, Chun-Fu CHEN, Ting-Wei CHIANG, Hsiang Jen TSENG
  • Patent number: 9882002
    Abstract: Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is a semiconductor device comprising a first semiconductor fin extending above a substrate, a first source region on the first semiconductor fin, and a first drain region on the first semiconductor fin. The first source region has a first width and the first drain region has a second width with the second width being different than the first width.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Jen Tseng, Ting-Wei Chiang, Wei-Yu Chen, Kuo-Nan Yang, Ming-Hsiang Song, Ta-Pen Guo
  • Patent number: 9853008
    Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-tier interconnecting structure having horizontal components, which is arranged within a semiconductor substrate and configured to electrically couple a first device tier to a second device tier. The integrated chip has a first device tier with a first semiconductor substrate. A first inter-tier interconnecting structure is disposed inside the first semiconductor substrate. The first inter-tier interconnecting structure has a first segment extending in a first direction and a second segment protruding outward from a sidewall of the first segment in a second direction substantially perpendicular to the first direction. A second device tier is electrically coupled to the first device tier by the first inter-tier interconnecting structure.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: December 26, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiang-Jen Tseng, Wei-Yu Chen, Ting-Wei Chiang, Li-Chun Tien
  • Patent number: 9831230
    Abstract: A layout of a standard cell is stored on a non-transitory computer-readable medium and includes a first conductive pattern, a second conductive pattern, a plurality of active area patterns and a first central conductive pattern. The plurality of active area patterns is isolated from each other and arranged in a first row and a second row between the first and second conductive patterns. The first row is adjacent the first conductive pattern and includes a first active area pattern and a second active area pattern among the plurality of active area patterns. The second row is adjacent the second conductive pattern and includes a third active area pattern and a fourth active area pattern among the plurality of active area patterns. The first central conductive pattern is arranged between the first and second active area patterns. The first central conductive pattern overlaps the first conductive pattern.
    Type: Grant
    Filed: August 13, 2013
    Date of Patent: November 28, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Li-Chun Tien, Ya-Chi Chou, Hui-Zhong Zhuang, Chun-Fu Chen, Ting-Wei Chiang, Hsiang Jen Tseng
  • Publication number: 20170255739
    Abstract: An integrated circuit designing system includes a non-transitory storage medium and a hardware processor. The non-transitory storage medium is encoded with a layout of a standard cell corresponding to a predetermined manufacturing process. The predetermined manufacturing process has a nominal minimum pitch, along a predetermined direction, of metal lines. The layout of the standard cell has a cell height along the predetermined direction, and the cell height is a non-integral multiple of the nominal minimum pitch. The hardware processor communicatively coupled with the non-transitory storage medium and configured to execute a set of instructions for generating an integrated circuit layout based on the layout of the standard cell and the nominal minimum pitch.
    Type: Application
    Filed: May 22, 2017
    Publication date: September 7, 2017
    Inventors: Shang-Chih HSIEH, Hui-Zhong ZHUANG, Ting-Wei CHIANG, Chun-Fu CHEN, Hsiang-Jen TSENG
  • Publication number: 20170154848
    Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) having parallel conductive paths between a BEOL interconnect layer and a middle-end-of-the-line (MEOL) structure, which are configured to reduce a parasitic resistance and/or capacitance of the IC. The IC comprises source/drain regions arranged within a substrate and separated by a channel region. A gate structure is arranged over the channel region and a MEOL structure is arranged over one of the source/drain regions. A conductive structure is arranged over and in electrical contact with the MEOL structure. A first conductive contact is arranged between the MEOL structure and an overlying BEOL interconnect wire (e.g., a power rail). A second conductive contact is configured to electrically couple the BEOL interconnect wire and the MEOL structure along a conductive path extending through the conductive structure, thereby forming parallel conductive paths between the BEOL interconnect layer and the MEOL structure.
    Type: Application
    Filed: June 1, 2016
    Publication date: June 1, 2017
    Inventors: Ni-Wan Fan, Ting-Wei Chiang, Cheng-I Huang, Jung-Chan Yang, Hsiang-Jen Tseng, Lipen Yuan, Chi-Yu Lu
  • Patent number: 9659129
    Abstract: An integrated circuit, manufactured by a process having a nominal minimum pitch of metal lines, includes a plurality of metal lines and a plurality of standard cells under the plurality of metal lines. The plurality of metal lines extends along a first direction, and the plurality of metal lines are separated, in a second direction perpendicular to the first direction, by integral multiples of the nominal minimum pitch. At least one of the plurality of standard cells has a cell height along the second direction, and the cell height is a non-integral multiple of the nominal minimum pitch.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: May 23, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shang-Chih Hsieh, Hui-Zhong Zhuang, Ting-Wei Chiang, Chun-Fu Chen, Hsiang-Jen Tseng
  • Patent number: 9653393
    Abstract: An integrated circuit layout includes a first metal line, a second metal line, at least one first conductive via and a first conductive segment. The first metal line is formed along a first direction. The at least one first conductive via is disposed over the first metal line. The second metal line is disposed over at least one first conductive via and is in parallel with the first metal line. The first conductive segment is formed on one end of the second metal line.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: May 16, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Yu Chen, Li-Chun Tien, Hui-Zhong Zhuang, Ting-Wei Chiang, Hsiang-Jen Tseng
  • Publication number: 20170068767
    Abstract: An integrated circuit designing system includes a non-transitory storage medium that is encoded with first and second sets of standard cell layouts that are configured for performing a selected function and which correspond to a specific manufacturing process. The manufacturing process is characterized by a nominal minimum pitch (T) for metal lines with each of the standard cell layouts being characterized by a cell height (H) that is a non-integral multiple of the nominal minimum pitch. The system also includes a hardware processor coupled to the storage medium for executing a set of instructions for generating an integrated circuit layout utilizing a combination of the first and second set of standard cell layouts and the nominal minimum pitch. The first and second sets of standard layouts are related in that each of the second set of standard cell layouts corresponds to a transformed version of a corresponding standard cell layout from the first set of standard cell layouts.
    Type: Application
    Filed: November 21, 2016
    Publication date: March 9, 2017
    Inventors: Shang-Chih HSIEH, Hui-Zhong ZHUANG, Ting-Wei CHIANG, Chun-Fu CHEN, Hsiang-Jen TSENG
  • Publication number: 20160372469
    Abstract: An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source region. A second diffusion area for a second type transistor is separated from the first diffusion area. The second type transistor includes a second drain region and a second source region. A gate electrode continuously extends across the first diffusion area and the second diffusion area in a routing direction. A first metallic structure is electrically coupled with the first source region. A second metallic structure is electrically coupled with the second drain region. A third metallic structure is disposed over and electrically coupled with the first and second metallic structures. A width of the first metallic structure is substantially equal to or larger than a width of the third metallic structure.
    Type: Application
    Filed: April 8, 2016
    Publication date: December 22, 2016
    Inventors: Ali Keshavarzi, Ta-Pen Guo, Shu-Hui Sung, Hsiang-Jen Tseng, Shyue-Shyh Lin, Lee-Chung Lu, Chung-Cheng Wu, Li-Chun Tien, Jung-Chan Yang, Ting-Yu Chen, Min Cao, Yung-Chin Hou
  • Patent number: 9501600
    Abstract: An integrated circuit is manufactured by a predetermined manufacturing process having a nominal minimum pitch of metal lines. The integrated circuit includes a plurality of metal lines extending along a first direction and a plurality of standard cells under the plurality of metal lines. The plurality of metal lines is separated, in a second direction perpendicular to the first direction, by integral multiples of the nominal minimum pitch. The plurality of standard cells includes a first standard cell configured to perform a predetermined function and having a first layout and a second standard cell configured to perform the predetermined function and having a second layout different than the first layout. The first and second standard cells have a cell height (H) along the second direction, and the cell height being a non-integral multiple of the nominal minimum pitch.
    Type: Grant
    Filed: October 11, 2013
    Date of Patent: November 22, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shang-Chih Hsieh, Hui-Zhong Zhuang, Ting-Wei Chiang, Chun-Fu Chen, Hsiang-Jen Tseng
  • Publication number: 20160336289
    Abstract: In some embodiments, the present disclosure relates to an integrated chip having an inter-tier interconnecting structure having horizontal components, which is arranged within a semiconductor substrate and configured to electrically couple a first device tier to a second device tier. The integrated chip has a first device tier with a first semiconductor substrate. A first inter-tier interconnecting structure is disposed inside the first semiconductor substrate. The first inter-tier interconnecting structure has a first segment extending in a first direction and a second segment protruding outward from a sidewall of the first segment in a second direction substantially perpendicular to the first direction. A second device tier is electrically coupled to the first device tier by the first inter-tier interconnecting structure.
    Type: Application
    Filed: July 26, 2016
    Publication date: November 17, 2016
    Inventors: Hsiang-Jen Tseng, Wei-Yu Chen, Ting-Wei Chiang, Li-Chun Tien
  • Publication number: 20160329405
    Abstract: The invention relates to a contact structure of a semiconductor device. An exemplary structure for a semiconductor device comprises an insulation region over a substrate; a gate electrode layer over the insulation region comprising a gate middle line; a first contact structure over the insulation region adjacent to the gate electrode layer comprising a first middle line, wherein the first middle line and the gate middle line has a first distance; and a second contact structure over the insulation region on a side of the gate electrode layer opposite to the first contact structure comprising a second middle line, wherein the second middle line and the gate middle line has a second distance greater than the first distance.
    Type: Application
    Filed: July 18, 2016
    Publication date: November 10, 2016
    Inventors: Hsiang-Jen Tseng, Ting-Wei Chiang, Wei-Yu Chen, Kuo-Nan Yang, Ming-Hsiang Song, Ta-Pen Guo
  • Patent number: 9443758
    Abstract: A stacked integrated circuit includes multiple tiers vertically connecting together. A multi-layer horizontal connecting structure is fabricated inside a substrate of a tier. Layers of the horizontal connecting structure have different patterns as viewed from above the substrate.
    Type: Grant
    Filed: December 11, 2013
    Date of Patent: September 13, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiang-Jen Tseng, Wei-Yu Chen, Ting-Wei Chiang, Li-Chun Tien
  • Patent number: 9397217
    Abstract: The invention relates to a contact structure of a semiconductor device. An exemplary structure for a semiconductor device comprises an insulation region over a substrate; a gate electrode layer over the insulation region comprising a gate middle line; a first contact structure over the insulation region adjacent to the gate electrode layer comprising a first middle line, wherein the first middle line and the gate middle line has a first distance; and a second contact structure over the insulation region on a side of the gate electrode layer opposite to the first contact structure comprising a second middle line, wherein the second middle line and the gate middle line has a second distance greater than the first distance.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: July 19, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Jen Tseng, Ting-Wei Chang, Wei-Yu Chen, Kuo-Nan Yang, Ming-Hsiang Song, Ta-Pen Guo