Abstract: A silicon carbide semiconductor device comprises a silicon carbide substrate, a drift layer, a plurality of first doped regions, a plurality of second doped regions, a plurality of third doped regions, a plurality of trenches and a gate electrode. The first doped regions are disposed in the drift layer and form a plurality of first p-n junctions and a plurality of JFET regions with the drift layer. The second doped regions are disposed within the first doped regions and form a plurality of second p-n junctions with the first doped regions. The third doped regions are disposed in the first doped regions and adjacent to the second doped regions. The trenches penetrate into the drift layer and run horizontally through the JFET regions. The gate electrode is disposed over a main surface and in the trenches, which is electrically isolated from the drift layer by a gate insulating layer.

Abstract: An air conditioning reactor is provided for producing high temperature, high pressure refrigerant in an engine driven air conditioning system. The system derives power from the waste heat from the coolant of an exothermic engine. The reactor has a double chamber construction which includes an inner chamber and outer chamber. Low temperature refrigerant vapor flows into the inner chamber while high temperature coolant flows into the outer chamber and around the exterior of the inner chamber, thereby raising the temperature and pressure of the refrigerant inside the inner chamber, and causing release of high pressure, high temperature refrigerant out of the inner chamber of the reactor. The reactor can therefore eliminate the need for a compressor in an air conditioning system by utilizing the waste heat in the coolant flowing out of a thermal combustion engine to produce high pressure, high temperature vapor.