Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: A method for tuning a threshold voltage of a transistor is disclosed. A channel layer is formed over a substrate. An interfacial layer is formed over and surrounds the channel layer. A gate dielectric layer is formed over and surrounds the interfacial layer. A dipole layer is formed over and wraps around the gate dielectric layer by performing a cyclic deposition etch process, and the dipole layer includes dipole metal elements and has a substantially uniform thickness. A thermal drive-in process is performed to drive the dipole metal elements in the dipole layer into the gate dielectric layer to form an interfacial dipole surface, and then the dipole layer is removed.

Abstract: A fluorescent lamp including a tube, a fluorescent layer, a discharging gas and two electrodes is provided. The fluorescent layer is disposed on an inner wall of the tube. The fluorescent layer has a plurality of patterned grooves to form a serial number. The discharging gas is distributed in the tube. In addition, the electrodes are disposed at two ends of the tube.

Abstract: An electron gun includes plural aligned charged grids each having an aperture (in a monochrome CRT) or plural apertures (in a color CRT) through which an electron beam (or beams) is directed. The beams emitted by a cathode sequentially transit a beam forming region (BFR), a dynamic focus lens and a main focus lens prior to being incident on the CRT's display screen. The electron beam tends to expand in diameter in the direction of the CRT's display screen. This results in an increase in the focusing effect on the electron beam of the electron gun's grids in proceeding from the BFR toward the display screen where the beam passing apertures in the various grids are of the same size. To increase electron beam focusing sensitivity while reducing the beam's dynamic focus voltage, the beam passing apertures in the gun's dynamic focus lens are provided with progressively reduced size in proceeding toward the electron gun's cathode.

Abstract: An inline electron gun for use in a multi-beam electron gun as in a color cathode ray tube (CRT) includes a main focus lens for focusing the electron beams on the CRT's display screen for providing a video image. The main focus lens includes plural charged grids aligned in a spaced manner along the electron gun's longitudinal axis through which plural (typically three) electron beams are directed. One or more of these charged grids includes at least two aligned common apertures for passing the three electron beams. The layered common aperture arrangement allows for increasing the length of the electron gun as well as the effective diameter of the electron gun's main focus lens for improved video image resolution without introducing electron beam astigmatism.

Abstract: An inline electron gun for use in a multi-beam electron gun as in a color cathode ray tube (CRT) includes a main focus lens for focusing the electron beams on the CRT's display screen for providing a video image. The main focus lens includes plural charged grids aligned in a spaced manner along the electron gun's longitudinal axis through which plural (typically three) electron beams are directed. One or more of these charged grids includes at least two aligned common apertures for passing the three electron beams. The layered common aperture arrangement allows for increasing the length of the electron gun as well as the effective diameter of the electron gun's main focus lens for improved video image resolution without introducing electron beam astigmatism.

Abstract: An electron gun includes plural aligned charged grids each having an aperture (in a monochrome CRT) or plural apertures (in a color CRT) through which an electron beam (or beams) is directed. The beams emitted by a cathode sequentially transit a beam forming region (BFR), a dynamic focus lens and a main focus lens prior to being incident on the CRT's display screen. The electron beam tends to expand in diameter in the direction of the CRT's display screen. This results in an increase in the focusing effect on the electron beam of the electron gun's grids in proceeding from the BFR toward the display screen where the beam passing apertures in the various grids are of the same size. To increase electron beam focusing sensitivity while reducing the beam's dynamic focus voltage, the beam passing apertures in the gun's dynamic focus lens are provided with progressively reduced size in proceeding toward the electron gun's cathode.