Abstract: A pixel structure includes at least a pixel electrode, and at least an aligning electrode. The pixel electrode, which has a central opening, is disposed on a substrate. The aligning electrode, which is disposed between the pixel electrode and substrate, includes an aligning part disposed under and corresponding to the central part of the pixel electrode. The aligning voltage applied to the aligning electrode is greater than the pixel voltage applied to the pixel electrode.

Abstract: A color filter and a black matrix thereof are provided. The black matrix disposed on the substrate comprises a frame that defines a pixel area for accommodating color filter inks when performing the ink-jet process, and a spacer disposed in each of the pixels for preventing inks from overflowing to adjacent pixel areas and improving the flatness of the formed color filter layer.

Abstract: A method for producing a light reflecting structure in a transflective or reflective liquid crystal display uses one or two masks for masking a photoresist layer in a back-side exposing process. The pattern on the masks is designed to produce rod-like structures or crevices and holes on exposed and developed photoresist layer. After the exposed photoresist is developed, a heat treatment process or a UV curing process is used to soften the photoresist layer so that the reshaped surface is more or less contiguous but uneven. A reflective coating is then deposited on the uneven surface. One or more intermediate layers can be made between the masks, between the lower mask and the substrate, and between the upper masks and the photoresist layers. The masks and the intermediate layers can be made in conjunction with the fabrication of the liquid crystal display panel.

Abstract: A thin film transistor array structure and a method for manufacturing the same are provided. The thin film transistor array structure comprises a substrate, including a transition area and a pad area. A patterned first metal layer is formed on the substrate, wherein the patterned first metal layer includes a data connecting line disposed in the transition area, and a data pad and a gate pad disposed in the pad area. A patterned first insulation layer is formed on the patterned first metal layer. The patterned first insulation layer at least defines a first opening on the gate pad, a second opening on the data pad, and a third opening in the transition area, so as to simplify following processes to increase the yield.

Abstract: A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.

Abstract: A reflective touch display panel and a manufacturing method thereof are provided. An incident light enters the display panel through a front substrate thereof. A plurality of pixel structures and a plurality of light sensing devices are disposed on an inner surface of the front substrate. The light sensing device includes a light sensing transistor having a transparent gate electrode. The manufacturing method for the reflective touch display panel includes the following steps. A first patterned transparent conductive layer, including the transparent gate electrode and a capacitance lower electrode, is formed on the front substrate. A first patterned conductive layer, a dielectric layer, a patterned semi-conductive layer, a second patterned conductive layer and a second patterned transparent conductive layer are sequentially formed on the front substrate to respectively form the light sensing device and the pixel structure. A reflective material layer and a back substrate are.

Abstract: A manufacturing method of a color filter comprising the following steps is provided. At first, a transparent substrate is provided. Next, a black matrix is formed on the transparent substrate to define a plurality of pixel areas on the transparent substrate. Then, an isolation layer is formed and patterned on the black matrix and then Red/Green/Blue color filter inks are filled into each of the pixel areas separately by inkjet printing. After that, the color filter inks are dried to form color filter units and optionally the isolation layer can further be patterned to form plenty of photo spacers on the black matrix. The isolation layers prevented the color filter inks from spilling out of the pixel areas and color mixing problems during color filter inkjet fabrication. Besides, it is characterized that the color filter units can be formed with even thickness.

Abstract: A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.

Abstract: A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.

Abstract: A pixel structure including a scan line, a data line, an active device, a shielding electrode, and a pixel electrode is provided on a substrate. The data line includes an upper conductive wire and a bottom conductive wire. The upper conductive wire is disposed over and across the scan line. The bottom conductive wire is electrically connected to the upper conductive wire. The active device is electrically connected to the scan line and the upper conductive wire. The shielding electrode is disposed over the bottom conductive wire. The pixel electrode disposed over the shielding electrode is electrically connected to the active device. In addition, parts of the pixel electrode and parts of the shielding electrode form a storage capacitor.

Abstract: A reflective type touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a reflective display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The reflective display medium is sealed between the front substrate and the rear substrate.

Abstract: A method of driving an electrophoretic display is set forth for avoiding image-edge residual while sequentially displaying a first frame and a second frame. During the time of displaying the first frame, set a common voltage to be a first voltage, apply a second voltage different from the first voltage to a first pixel for writing a first data signal into the first pixel, and apply the first voltage to a second pixel adjacent to the first pixel for retaining a second data signal of the second pixel, which is different from the first data signal. During the time of displaying the second frame, set the common voltage to be the second voltage, apply the first voltage to the first pixel for writing the second data signal into the first pixel, and apply the first voltage to the second pixel for retaining the second data signal of the second pixel.

Abstract: A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.

Abstract: A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.

Abstract: An electrophoresis display pixel including an electrophoresis display film, a substrate, a first active device, a second active device, a first electrode, and a second electrode is provided. The substrate is disposed on the electrophoresis display film, and the substrate has a transparent region and a non-transparent region. The first active device and the second active device are disposed on the substrate and located in the non-transparent region. The first electrode is disposed on the substrate, located in the transparent region, and electrically connected to the first active device. The second electrode is disposed on the substrate, located in the non-transparent region, and electrically connected to the second active device. A light passes through the transparent region and enters the electrophoresis display film to be displayed. A display apparatus including the abovementioned electrophoresis display pixel is also provided.

Abstract: A pixel structure is disclosed. The pixel structure includes a substrate, a first data line having at least one end formed on the substrate, a first insulation layer overlying the first data line and exposing a part of the end of the first data line, a shielding electrode disposed on the first insulation layer and overlapped with the first data line, a second data line formed on the first insulation layer and electrically connected to the exposed end of the first data line, a second insulation layer overlying the shielding electrode and the second data line, and a pixel electrode formed on the second insulation layer and overlapped with the shielding electrode. The invention also provides a method for fabricating the pixel structure.

Abstract: A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer.

Abstract: A pixel structure including a gate, a gate dielectric layer, a patterned semiconductor layer having a channel area disposed above the gate, a patterned dielectric layer having an etching-stop layer disposed above the gate and a number of bumps, a patterned metal layer having a reflective pixel electrode, a source and a drain, an overcoat dielectric layer, and a transparent pixel electrode sequentially disposed on a substrate is provided. The source and the drain respectively cover portions of the channel area. The reflective pixel electrode connects the drain and covers the bumps to form an uneven surface. The overcoat dielectric layer disposed on a transistor constituted by the gate, the gate dielectric layer, the patterned semiconductor layer, the source and the drain has a contact opening exposing a portion of the reflective pixel electrode. The transparent pixel electrode is electrically connected to the reflective pixel electrode through the contact opening.

Abstract: This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode having a first portion and a second portion extending from the first portion, and formed over the scan line, the data line and the switch, where the first portion is overlapped with the switch and the second portion is overlapped with the data line, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode in the pixel area, where the first portion is overlapped with the first portion of the shielding electrode so as to define a storage capacitor therebetween and the second portion has no overlapping with the second portion of the shielding electrode.

Abstract: This invention in one aspect relates to a pixel structure. In one embodiment, the pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode formed over the switch, a plane organic layer formed over the date line and the pixel area and having no overlapping with the shielding electrode, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode and the plane organic layer in the pixel area, wherein the first portion is overlapped with the shielding electrode so as to define a storage capacitor therebetween, and the second portion overlays the plane organic layer and has no overlapping with the data line.