Abstract: A semiconductor memory structure includes a semiconductor substrate including an active region and a chop region. The semiconductor memory structure also includes an isolation structure disposed in the chop region, a first gate structure extending at least through the isolation structure in the chop region, and a second gate structure extending at least through the active region. The semiconductor memory structure also includes a doped region disposed in the active region. A first distance between the doped region and the first gate structure is shorter than a second distance between the doped region and the second gate structure.

Abstract: A semiconductor memory structure includes a semiconductor substrate including an active region and a chop region. The semiconductor memory structure also includes an isolation structure disposed in the chop region, a first gate structure extending at least through the isolation structure in the chop region, and a second gate structure extending at least through the active region. The semiconductor memory structure also includes a doped region disposed in the active region. A first distance between the doped region and the first gate structure is shorter than a second distance between the doped region and the second gate structure.

Abstract: A semiconductor structure and its manufacturing method are provided. The method includes sequentially forming an insulating layer and a patterned mask layer on a substrate. The patterned cover curtain layer has an opening, and the opening includes a main body portion and two extension portions located at both ends of the main body portion. The method includes sequentially forming a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer on the insulating layer. The first sacrificial layer fills the extension portions and defines a recess in the main body portion. The second sacrificial layer is formed in the recess defined by the first sacrificial layer. The third sacrificial layer is formed on the first sacrificial layer located in the extension portions.