Patents by Inventor Hsiang-Tsung YEN

Hsiang-Tsung YEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INDUCTIVE CAPACITIVE STRUCTURE AND METHOD OF MAKING THE SAME
    Publication number: 20150115402
    Abstract: An inductive capacitive structure including a first substrate, a first conductive line over the first substrate, a first shielding layer over the first substrate and a second substrate over the first substrate.
    Type: Application
    Filed: October 25, 2013
    Publication date: April 30, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiang-Tsung YEN, Cheng-Wei LUO