Abstract: A rotary apparatus includes a casing having a top sunk opening and an axial hole that are coaxially with each other along an axial line. A top adjusting disc unit is fixed in the top sunk opening, and has a top inner surrounding surface and a top outer surrounding surface. A top inner hole of the top inner surrounding surface extends along a central line parallel to and offset from the axial line. The top outer surrounding surface is non-coaxial with the top inner surrounding wall. A passive gear unit is disposed in the axial hole, and is driven by an active gear unit that is driven by a drive unit in the casing. The passive gear unit has an output shaft extending along the central line. A top bearing is clamped between the top support portion and the top inner surrounding surface of the top adjusting disc unit.

Abstract: A semiconductor package is provided for carrying a sleeve member and a fan wheel axially coupled to the sleeve member so as to provide a heat dissipating function. The semiconductor package includes: a substrate; a coil module and at least an electronic component disposed on the substrate; and an encapsulant formed on the substrate for encapsulating the coil module and the electronic component so as to prevent the coil module and the electronic component from disturbing air flow generated by the fan wheel during operation, thereby avoiding generation of noises or vibrations.

Abstract: A method for reducing roughens of the metals on a ceramic substrate having metal filled via holes, comprising forming via holes, a seed layer, and through film coating, exposure and development process followed by multiple steps of DC electroplating to achieve copper circuit with desired surface roughness.

Abstract: A semiconductor package includes: a substrate having a first surface and a second surface opposing the first surface, the first surface having a fan placement zone, a hole and a ventilation hole penetrating the substrate formed at the fan placement zone of the substrate; an electronic component disposed on the first surface surrounding the fan placement zone, the electronic component electrically connected to the substrate; an encapsulant formed on the electronic component and the first surface of the substrate, the encapsulant having an encapsulant opening exposing the fan placement zone; and a fan unit disposed in the encapsulant opening and electrically connected to the substrate. Since the electronic component is disposed on the substrate outside the fan placement zone, heat generated by the electronic component can efficiently dissipate while damage problems of over heat will not occur, and the overall height of the fan unit can thus be decreased.

Abstract: A semiconductor package is provided for carrying a sleeve member and a fan wheel axially coupled to the sleeve member so as to provide a heat dissipating function. The semiconductor package includes: a substrate; a coil module and at least an electronic component disposed on the substrate; and an encapsulant formed on the substrate for encapsulating the coil module and the electronic component so as to prevent the coil module and the electronic component from disturbing air flow generated by the fan wheel during operation, thereby avoiding generation of noises or vibrations.

Abstract: A semiconductor package includes: a substrate having a first surface and a second surface opposing the first surface, the first surface having a fan placement zone, a hole and a ventilation hole penetrating the substrate formed at the fan placement zone of the substrate; an electronic component disposed on the first surface surrounding the fan placement zone, the electronic component electrically connected to the substrate; an encapsulant formed on the electronic component and the first surface of the substrate, the encapsulant having an encapsulant opening exposing the fan placement zone; and a fan unit disposed in the encapsulant opening and electrically connected to the substrate. Since the electronic component is disposed on the substrate outside the fan placement zone, heat generated by the electronic component can efficiently dissipate while damage problems of over heat will not occur, and the overall height of the fan unit can thus be decreased.

Abstract: A method of manufacturing semiconductor devices. An alignment mark is formed in any one of the dies in a substrate. A waiting-for-patterning layer is formed over the dies. A negative photoresist layer is formed over the waiting-for-patterning layer. A first exposure is carried out so that a plurality of first exposed regions is formed in all the dies of the chip. A second exposure is carried out to form a second exposed region. The second exposed region overlaps with the first exposed region and the unexposed region above the alignment mark and the overlapping region covers the alignment mark region. A photoresist development is conducted to remove the negative photoresist in the unexposed regions. Using the negative photoresist as a mask, a portion of the waiting-for-patterning layer is removed to form a pattern on the waiting-for-patterning layer. The negative photoresist layer is removed.

Abstract: A method for providing a uniform coating of photoresist over substrate for defining high density integrated device and circuit patterns. This is accomplished by applying the photoresist onto the substrate in multiple, separate dispensing steps and leveling spins to attain the designed thickness uniformly over substrate having high topographic surfaces, thereby preserve the integrity of the critical dimension for multi-level alignments used in the fabrication of integrated devices and circuits.

Abstract: An etching process is used to etch the polysilicon layer. Then, Polymers are formed on the polysilicon layer after an ash step is performed. An organic layer is formed on the surface of the polysilicon layer, and on the polymers. An anisotropically etch is carried out to etch the organic layer, thereby forming organic side wall spacers on the side walls of the polysilicon layer. The etching is continuously performed to etch the polysilicon layer using the polymers and organic side wall spacers as masks. Next, an ash and a RCA clean procedure are performed to remove the residual polymers and the organic layer. A dielectric layer is then deposited on the surface of the polysilicon. A conductive layer is deposited over the dielectric layer.