Abstract: A semiconductor laser array structure operable at relatively high powers and high brightness levels compared with prior laser arrays. At least two principal lasing regions are formed in a single active layer of the structure, and are closely coupled by an intermediate region in which there is optical gain. Preferably, the dimensions of the structure are selected to provide single-filament lasing in the principal lasing regions and in the intermediate region, resulting in a composite output that is apparently phase-locked and has a high-brightness, single-lobe far-field radiation distribution pattern with a low divergence angle. The disclosed structure uses gallium arsenide and gallium aluminum arsenide materials and is fabricated using liquid-phase epitaxy. Longitudinal mode selection in the device may be accomplished by configuring the two channels to produce different sets of longitudinal modes, the close coupling of the two regions resulting in the output of only those modes common to both regions.

Abstract: A monolithic device, including a substrate, a semiconductor laser formed in the substrate, and a metal-insulator-semiconductor field-effect transistor (MISFET) also formed in the substrate, in such a manner as to facilitate the use of planar fabrication techniques. In a first disclosed embodiment, the device is formed on an n+ substrate and the MISFET is operated in inversion mode. In a second embodiment, an n+ substrate is also employed, but the structure includes a semi-insulating layer to confine current-carrier flow in the MISFET, which is operated in depletion mode. In a third embodiment, a semi-insulating substrate is employed, and the laser is of the buried heterostructure type.