Abstract: An assistive device structure for positioning and pressure relief is provided, including a first elastic layer and a second elastic layer, which are attached by using a high-frequency encapsulation process, sealing, bagging, thermoforming, or an integrally molding process. Each of the first and second elastic layers has a bottom surface and an arc surface disposed opposite to each other. The arc surface includes two protrusions and a recess formed there in between. The two protrusions have different heights. A hollow area is disposed in the recess of the first and second elastic layers. Based on such structure, the bottom surfaces of the first and second elastic layers are attached to form the proposed assistive device structure for a user to lean against and providing multiple positioning effects and pressure relief. More than four axial directions of supporting forces are generated to effectively enhance muscle relaxation and stress relief.

Abstract: A solar photovoltaic system includes a solar cell array, a bypass diode and a light-emitting module. The solar cell array has a positive terminal and a negative terminal and includes a plurality of solar cells connected in series. The bypass diode is connected to the solar cell array in parallel. The light-emitting module is connected to the solar cell array in parallel and includes a Zener diode and a light-emitting diode. The Zener diode has a cathode and an anode electrically connected to the positive terminal and the negative terminal of the solar cell array, respectively. The light-emitting diode is connected to the Zener diode in series. The light-emitting module has a threshold voltage which is a breakdown voltage of the Zener diode and related to a voltage of a maximum power of the solar cell array under a standard illuminance.

Abstract: A defect inspection method and a defect inspection system for a solar cell are proposed, where the method includes the following steps. Output voltages and output currents of the solar cell are measured by a measuring device. A stepwise current-voltage curve (stepwise IV curve) and a fitted current-voltage curve (fitted IV curve) are generated by a processing device according to the output voltages and the output currents, and whether a first error of the fitted IV curve is less than a first error tolerance is determined by the processing device. When the first error is not less than the first error tolerance, whether there exists at least one surge in steps of the stepwise IV curve is determined by the processing device so as to determine whether the solar cell has a defect. Next, a determined result of the processing device is outputted by the output device.

Abstract: A defect inspection method and a defect inspection system for a solar cell are proposed, where the method includes the following steps. Output voltages and output currents of the solar cell are measured by a measuring device. A stepwise current-voltage curve (stepwise IV curve) and a fitted current-voltage curve (fitted IV curve) are generated by a processing device according to the output voltages and the output currents, and whether a first error of the fitted IV curve is less than a first error tolerance is determined by the processing device. When the first error s not less than the first error tolerance, whether there exists at least one surge in steps of the stepwise IV curve is determined by the processing device so as to determine whether the solar cell has a defect. Next, a determined result of the processing device is outputted by the output device.

Abstract: A method of fabricating a 3-dimensional structure on a copper-indium-gallium-diselenide material comprises steps: preparing a CIGS (Copper Indium Gallium Diselenide) substrate, and defining two types of regions complementary to each other on the CIGS substrate; providing a mold absorbing an etching solution that can etch the CIGS substrate instead of the mold; aligning the mold to the two types of regions, and allowing the etching solution to flow out from the mold and contact with the two types of regions to etch the two types of regions for generating a level drop between the two types of regions and forming a 3-dimensional (3D) structure on the CIGS substrate. As a result, the present invention can fabricate a large-area 3D structure on a CIGS substrate rapidly without using expensive equipments or complicated processes.