Patents by Inventor Hsiang-Yu Chang

Hsiang-Yu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240117297
    Abstract: A p-aminobenzoic acid-producing microorganism is provided. The p-aminobenzoic acid-producing microorganism is obtained by a method for preparing a p-aminobenzoic acid-producing microorganism. The method for preparing a p-aminobenzoic acid-producing microorganism includes (a) performing an acclimation process on a source microorganism with at least one sulfonamide antibiotic to obtain at least one acclimatized microorganism and (b) screening out at least one p-aminobenzoic acid-producing microorganism from the at least one acclimatized microorganism, wherein the at least one p-aminobenzoic acid-producing microorganism has a higher p-aminobenzoic acid titer than the source microorganism.
    Type: Application
    Filed: December 29, 2022
    Publication date: April 11, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Ching CHANG, Jhong-De LIN, Ya-Lin LIN, Hung-Yu LIAO, Hsiang Yuan CHU, Jie-Len HUANG
  • Publication number: 20210121438
    Abstract: Described herein are pharmaceutical compositions and methods for treating and preventing conformational diseases such as, TDP-43 proteinopathies, SMA, amyloid positive cancer, normal and premature aging. Also disclosed are in vitro screening methods for screening a therapeutic candidate to treat conformation diseases, by measuring the expression level of prion-like folding of aggregation-prone proteins or a P53 aggregate.
    Type: Application
    Filed: June 28, 2019
    Publication date: April 29, 2021
    Inventors: Hsiang-Yu CHANG, I-Fan WANG, Tsung-Yu TSAI
  • Publication number: 20170040532
    Abstract: A resistive random access memory (RRAM) including a substrate, a conductive layer, a resistive switching layer, a copper-containing oxide layer, and an electron supply layer is provided. The conductive layer is disposed on the substrate. The resistive switching layer is disposed on the conductive layer. The copper-containing oxide layer is disposed on the resistive switching layer. The electron supply layer is disposed on the copper-containing oxide layer.
    Type: Application
    Filed: December 22, 2015
    Publication date: February 9, 2017
    Inventors: Tseung-Yuen Tseng, Shun-Li Lan, Hsiang-Yu Chang, Chun-An Lin