Abstract: A memory operation method, comprising: when a first super block of a memory device is a open block (or in programming state), obtaining a first read count of one of a plurality of first memory blocks in the first super block, wherein the first read count is a number of times that data of one of the first memory blocks is read out; determining whether the first read count is larger than a first threshold; and when the first read count is larger than the first threshold, moving a part of the data in the first super block to a safe area in the memory device, wherein the part of the data comprises data in the first memory block.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: A method of reducing resist outgassing for EUV lithography is disclosed. The method includes forming a material layer over a substrate wherein a top surface of the material layer contains a certain concentration of a quencher or a base. The method further includes forming a resist layer over the top surface of the material layer and exposing the resist layer to a EUV radiation for patterning. The quencher or the base underneath the resist layer acts to suppress resist outgassing during the EUV exposure. The material layer itself may serve as a hard mask layer or an anti-reflection layer for the patterning process, in addition to being the carrier of the quencher or the base. The method can be used in other types of lithography, such as e-beam lithography, for reducing resist outgassing.

Abstract: A method of reducing resist outgassing for EUV lithography is disclosed. The method includes forming a material layer over a substrate wherein a top surface of the material layer contains a certain concentration of a quencher or a base. The method further includes forming a resist layer over the top surface of the material layer and exposing the resist layer to a EUV radiation for patterning. The quencher or the base underneath the resist layer acts to suppress resist outgassing during the EUV exposure. The material layer itself may serve as a hard mask layer or an anti-reflection layer for the patterning process, in addition to being the carrier of the quencher or the base. The method can be used in other types of lithography, such as e-beam lithography, for reducing resist outgassing.