Patents by Inventor HSIANG-YU TSAI

HSIANG-YU TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11145592
    Abstract: Semiconductor devices and methods of forming the same are provided. A method according to an embodiment includes receiving a substrate including a lower contact feature, depositing a first dielectric layer over a substrate, forming a metal-insulator-metal (MIM) structure over the first dielectric layer, depositing a second dielectric layer over the MIM structure, performing a first etch process to form an opening that extends through the second dielectric layer to expose the MIM structure, performing a second etch process to extend the opening through the MIM structure to expose the first dielectric layer; and performing a third etch process to further extend the opening through the first dielectric layer to expose the lower contact feature. Etchants of the first etch process and the third etch process include fluorine while the etchant of the second etch process is free of fluorine.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: October 12, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsiang-Ku Shen, Jian-Ming Huang, Han-Yi Chen, Ecko Lu, Hsiang-Yu Tsai, Chih-Hung Lu, Wen-Tung Chen
  • Publication number: 20210249350
    Abstract: Semiconductor devices and methods of forming the same are provided. A method according to an embodiment includes receiving a substrate including a lower contact feature, depositing a first dielectric layer over a substrate, forming a metal-insulator-metal (MIM) structure over the first dielectric layer, depositing a second dielectric layer over the MIM structure, performing a first etch process to form an opening that extends through the second dielectric layer to expose the MIM structure, performing a second etch process to extend the opening through the MIM structure to expose the first dielectric layer; and performing a third etch process to further extend the opening through the first dielectric layer to expose the lower contact feature. Etchants of the first etch process and the third etch process include fluorine while the etchant of the second etch process is free of fluorine.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Inventors: Hsiang-Ku Shen, Jian-Ming Huang, Han-Yi Chen, Ecko Lu, Hsiang-Yu Tsai, Chih-Hung Lu, Wen-Tung Chen
  • Patent number: 9618732
    Abstract: A lens structure is provided. The lens structure comprises a first barrel and a second barrel. The first barrel comprises a first pin and a second pin. The second barrel comprises a continuous groove. Wherein in a wide-angle end, the first pin is located in the continuous groove and the second pin is located outside of the second barrel. Wherein in a telephoto end, the first pin is located outside of the second barrel and the second pin is located in the continuous groove.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: April 11, 2017
    Assignee: ABILITY ENTERPRISE CO., LTD.
    Inventors: Hsiang-Yu Tsai, Wen-Chieh Cheng
  • Patent number: 9400368
    Abstract: A lens structure is provided. The lens structure comprises a first barrel, at least one guider and a second barrel. The first barrel has a first groove, and comprises a first pin. The guider is slidably set to the first groove. The guider comprises a main body, a first limiting portion and a second limit portion. The main body has a first end and a second end opposite to the first end. The first limiting portion is connected to the main body and located between the first end and the second end. The second limiting portion is connected to the second end. The second barrel moves with the guider through the first limiting portion and has a second groove to which the first pin of the first barrel is set.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: July 26, 2016
    Assignee: ABILITY ENTERPRISE CO., LTD.
    Inventors: Wen-Chieh Cheng, Hsiang-Yu Tsai
  • Patent number: 9368627
    Abstract: A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; and a stress memorization technology (SMT) sidewall spacer over a sidewall of the gate stack. The gate stack includes a gate dielectric layer over the semiconductor substrate and a gate electrode over the gate dielectric layer. The SMT sidewall spacer provides a stress for a channel region beneath the gate stack.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: June 14, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ping-Chung Liu, Wei-Chiang Hung, Hsiang-Yu Tsai, Kuo Hui Chang
  • Publication number: 20160079420
    Abstract: A semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; and a stress memorization technology (SMT) sidewall spacer over a sidewall of the gate stack. The gate stack includes a gate dielectric layer over the semiconductor substrate and a gate electrode over the gate dielectric layer. The SMT sidewall spacer provides a stress for a channel region beneath the gate stack.
    Type: Application
    Filed: September 11, 2014
    Publication date: March 17, 2016
    Inventors: PING-CHUNG LIU, WEI-CHIANG HUNG, HSIANG-YU TSAI, KUO HUI CHANG
  • Publication number: 20120140343
    Abstract: A lens module is disclosed. The lens module includes a lead screw, a nut member, and a lens frame. The nut member is screw-jointed with the lead screw. The nut member is interlocked to the lens frame.
    Type: Application
    Filed: March 31, 2011
    Publication date: June 7, 2012
    Applicant: ABILITY ENTERPRISE CO., LTD.
    Inventors: CHIEN-HSIN LU, HSIANG-YU TSAI
  • Publication number: 20120140342
    Abstract: An optical lens device is disclosed. The optical lens device includes an optical lens, a shading film, and a sensor. The shading film is disposed within the optical lens, and the shading film has an opening. The sensor is disposed at an imaging position. Wherein at least one light beam which enters the optical lens will access to the sensor, or will be blocked by the shading film.
    Type: Application
    Filed: April 25, 2011
    Publication date: June 7, 2012
    Applicant: ABILITY ENTERPRISE CO., LTD.
    Inventor: HSIANG-YU TSAI