Abstract: A particle removal method includes loading a particle attracting member with a coating layer into a processing chamber of a processing apparatus. The processing chamber is configured to perform a lithography exposure process on a semiconductor wafer. The method also includes fixing the particle attracting member on a reticle holder in the processing chamber in a cleaning cycle, attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer, and loading the particle attracting member with the coating layer and the attracted particles out of the processing chamber, after the cleaning cycle. The method also includes loading the semiconductor wafer into the processing chamber, and performing the lithography exposure process on the semiconductor wafer in the processing chamber using a reticle fixed on the reticle holder after the cleaning cycle.

Abstract: A curve alignment method and apparatus are provided. In the method, data obtained by at least one equipment analyzing a test sample is retrieved to generate test curves. In response to an alignment operation of directing a first point around a first curve to a second point around a second curve among the test curves, a correspondence between features corresponding to the first and second points is recorded, and correspondences of alignment operations are collected as feature data. Data obtained by the equipment analyzing a current sample is retrieved to generate current curves, and a third point matching the first feature on a third curve and a fourth point matching the second feature on a fourth curve are searched according to the correspondences. At least one of the third curve and the fourth curve is adjusted to align the third point with the fourth point.