Abstract: A thermally conductive board includes a first metal layer, a second metal layer, and a thermally conductive layer. The material of the first metal layer includes copper, and the first metal layer has a first top surface and a first bottom surface opposite to the first top surface. A first metal coating layer covers the first bottom surface. The material of the second metal layer includes copper, and the second metal layer has a second top surface and a second bottom surface opposite to the second top surface. A second metal coating layer covers the second top surface and faces the first metal coating layer. The thermally conductive layer is an electrically insulator laminated between the first metal coating layer and the second metal coating layer.

Abstract: A virtual dataset may be created in a database system. The virtual dataset may include data items stored in a storage system that are each associated with a respective label. The virtual dataset may include a first changeset identifying the data items, and may be updated to include a second changeset identifying different data items later stored in the storage system and included in the virtual dataset. Access to a learning dataset that includes either the first changeset, the second changeset, or both, may be provided upon request.

Abstract: A request to access a virtual dataset identifying one or more changeset selection criteria may be received. One or more changesets may be selected based on the selection criteria. Each changeset may correspond with a point in time and may include data references to data items added to the virtual dataset at the point in time. A learning dataset that includes a plurality of data items may be identified.

Abstract: A method for processing a substrate to create an air gap includes a) providing a substrate including a first trench and a second trench; b) depositing a conformal layer on the substrate; c) performing sputtering to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.

Abstract: A method for processing a substrate to create an air gap includes a) providing a substrate including a first trench and a second trench; b) depositing a conformal layer on the substrate; c) performing sputtering to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.

Abstract: A semiconductor processing gas flow manifold is provided that allows for the gas flow characteristics of the manifold gas flow paths to be individually adjusted outside of a semiconductor processing chamber. The gas flow manifold may be connected to a process gas dispersion device inside the semiconductor processing chamber. The process gas dispersion device may have multiple gas flow channels, each channel separately connected to a manifold gas flow path and targeted at a region on the semiconductor wafer. The adjustment of the individual manifold gas flow paths may vary the amount of process gas dispersed through each process gas dispersion gas flow channel onto the corresponding region of the semiconductor wafer.

Abstract: A semiconductor processing gas flow manifold is provided that allows for the gas flow characteristics of the manifold gas flow paths to be individually adjusted outside of a semiconductor processing chamber. The gas flow manifold may be connected to a process gas dispersion device inside the semiconductor processing chamber. The process gas dispersion device may have multiple gas flow channels, each channel separately connected to a manifold gas flow path and targeted at a region on the semiconductor wafer. The adjustment of the individual manifold gas flow paths may vary the amount of process gas dispersed through each process gas dispersion gas flow channel onto the corresponding region of the semiconductor wafer.

Abstract: Disclosed are a biomass chemical toner composition and a method for manufacturing the same. First, a biomass resin is mixed with a first hydrophobic resin to form organic particles. The organic particles, a second hydrophobic resin, and a pigment are mixed by emulsion aggregation to form cores. Subsequently, a third hydrophobic resin is formed on the surface of the cores, and the third hydrophobic resin is further heated and coalesced to form a continuous structure encapsulating the cores. Accordingly, the biomass chemical toner obtained from the described method has good anti-humidity, good charge stability, and low fusing temperature.

Abstract: Disclosed are a biomass chemical toner composition and a method for manufacturing the same. First, a biomass resin is mixed with a first hydrophobic resin to form organic particles. The organic particles, a second hydrophobic resin, and a pigment are mixed by emulsion aggregation to form cores. Subsequently, a third hydrophobic resin is formed on the surface of the cores, and the third hydrophobic resin is further heated and coalesced to form a continuous structure encapsulating the cores. Accordingly, the biomass chemical toner obtained from the described method has good anti-humidity, good charge stability, and low fusing temperature.