Patents by Inventor Hsiao-Chang YEN

Hsiao-Chang YEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11977776
    Abstract: A flash memory device is disclosed. The memory cell array has a first plane and a second plane and stores a first data unit and a second data unit. The data register buffers the first data unit and the second data unit transmitted from the memory cell array when a read command or a data toggle command is received and stored by the command register. The control circuit performs a data toggle operation to control the data register selecting and transferring the first data unit and the second data unit to the I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through a specific communication interface in response to the read command or the data toggle command. The transmission of the first data unit is followed by the transmission of the second data unit.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: May 7, 2024
    Assignee: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Patent number: 11977752
    Abstract: A method of a flash memory controller includes: providing an input/output (I/O) circuit coupled to the flash memory device; and sending a data toggle set-feature signal to the flash memory device to enable, disable, or configure a data toggle operation of the flash memory device; the data toggle operation of the flash memory device is arranged to make the flash memory device control the flash memory device's data register selecting and transferring a first data unit and a second data unit to the flash memory device's I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through the specific communication interface in response to a specific read command or a data toggle command transmitted by the flash memory controller.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: May 7, 2024
    Assignee: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Patent number: 11972146
    Abstract: A method of a flash memory controller includes: providing an input/output (I/O) circuit coupled to a flash memory device through a specific communication interface; and, controlling a processor sending a specific read command or a data toggle command through the I/O circuit and the specific communication interface into the flash memory device, to make the flash memory device perform a data toggle operation to control the flash memory device's data register selecting and transferring a first data unit and a second data unit to the flash memory device's I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through the specific communication interface in response to the specific read command or the data toggle command.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: April 30, 2024
    Assignee: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20240111417
    Abstract: A method of a flash memory controller includes: controlling an I/O circuit using a set-feature signal, which carries a set-feature command, feature address, and parameter information, and transmitting the set-feature signal to a flash memory device; the feature address corresponds to a valid data portion or a dummy data portion following the valid data portion, and both the valid data portion and dummy data portion are comprised in a full page data which is to be written into a physical page unit of the flash memory device or to be read out from the physical page unit; the corresponding parameter information is used to record the valid data portion's column address and data length, the dummy data portion's column address and data length, the dummy data portion's column address and the valid data portion's, or the dummy data portion's data length and the valid data portion's data length.
    Type: Application
    Filed: September 30, 2022
    Publication date: April 4, 2024
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20240094915
    Abstract: A method for accessing a flash memory module includes: selecting a block in the flash memory module; selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings at least according to an erase count of the block, wherein the plurality of sets of encoding/decoding settings include different error correction code (ECC) lengths, respectively; utilizing the specific encoding/decoding setting to encode a data to generate an encoded data; and writing the encoded data into the block.
    Type: Application
    Filed: October 31, 2022
    Publication date: March 21, 2024
    Applicant: Silicon Motion, Inc.
    Inventors: Chia-Chi Liang, Hsiao-Chang Yen, Tsu-Han Lu
  • Publication number: 20240094912
    Abstract: A method for accessing a flash memory module includes: determining a type of data to be written into the flash memory module; selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings at least according to the type of data, wherein the plurality of sets of encoding/decoding settings correspond to different data lengths, respectively; utilizing the specific encoding/decoding setting to encode the data to generate encoded data; and writing the encoded data into a block of the flash memory module.
    Type: Application
    Filed: November 24, 2022
    Publication date: March 21, 2024
    Applicant: Silicon Motion, Inc.
    Inventors: Chia-Chi Liang, Hsiao-Chang Yen, Tsu-Han Lu
  • Patent number: 11935595
    Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: March 19, 2024
    Assignee: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Patent number: 11914901
    Abstract: A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: February 27, 2024
    Assignee: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20240004581
    Abstract: A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 4, 2024
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20240004550
    Abstract: A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 4, 2024
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Patent number: 11861212
    Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: January 2, 2024
    Assignee: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Patent number: 11809748
    Abstract: The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, the flash memory module includes a plurality of planes, and each plane includes a plurality of blocks; and the control method includes the steps of: after the flash memory controller is powered on, reading a first code bank from a specific block of the plurality of blocks; storing the first code bank into a buffer memory; executing the first code bank to manage the flash memory module; when the flash memory controller starts a code bank swapping operation, trying to read a second code bank from a super block; if the second code bank is read successfully, storing the second code bank into the buffer memory to replace the first code bank; and executing the second code bank to manage the flash memory module.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: November 7, 2023
    Assignee: Silicon Motion, Inc.
    Inventors: Chia-Chi Liang, Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20230289098
    Abstract: The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, the flash memory module includes a plurality of planes, and each plane includes a plurality of blocks; and the control method includes the steps of: after the flash memory controller is powered on, reading a first code bank from a specific block of the plurality of blocks; storing the first code bank into a buffer memory; executing the first code bank to manage the flash memory module; when the flash memory controller starts a code bank swapping operation, trying to read a second code bank from a super block; if the second code bank is read successfully, storing the second code bank into the buffer memory to replace the first code bank; and executing the second code bank to manage the flash memory module.
    Type: Application
    Filed: March 10, 2022
    Publication date: September 14, 2023
    Applicant: Silicon Motion, Inc.
    Inventors: Chia-Chi Liang, Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20230280929
    Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
    Type: Application
    Filed: February 24, 2022
    Publication date: September 7, 2023
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20230280939
    Abstract: A method of a flash memory controller includes: providing an input/output (I/O) circuit coupled to a flash memory device through a specific communication interface; and, controlling a processor sending a specific read command or a data toggle command through the I/O circuit and the specific communication interface into the flash memory device, to make the flash memory device perform a data toggle operation to control the flash memory device’s data register selecting and transferring a first data unit and a second data unit to the flash memory device’s I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through the specific communication interface in response to the specific read command or the data toggle command.
    Type: Application
    Filed: February 24, 2022
    Publication date: September 7, 2023
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20230266922
    Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 24, 2023
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20230266895
    Abstract: A method of a flash memory controller includes: providing an input/output (I/O) circuit coupled to the flash memory device; and sending a data toggle set-feature signal to the flash memory device to enable, disable, or configure a data toggle operation of the flash memory device; the data toggle operation of the flash memory device is arranged to make the flash memory device control the flash memory device's data register selecting and transferring a first data unit and a second data unit to the flash memory device's I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through the specific communication interface in response to a specific read command or a data toggle command transmitted by the flash memory controller.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 24, 2023
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20230268002
    Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 24, 2023
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Publication number: 20230266921
    Abstract: A flash memory device is disclosed. The memory cell array has a first plane and a second plane and stores a first data unit and a second data unit. The data register buffers the first data unit and the second data unit transmitted from the memory cell array when a read command or a data toggle command is received and stored by the command register. The control circuit performs a data toggle operation to control the data register selecting and transferring the first data unit and the second data unit to the I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through a specific communication interface in response to the read command or the data toggle command. The transmission of the first data unit is followed by the transmission of the second data unit.
    Type: Application
    Filed: February 24, 2022
    Publication date: August 24, 2023
    Applicant: Silicon Motion, Inc.
    Inventors: Tsu-Han Lu, Hsiao-Chang Yen
  • Patent number: 10802913
    Abstract: A solid state storage device using a prediction function is provided. The solid state storage device includes a control circuit and a non-volatile memory. The control circuit generates collection read operation commands. The collection read operation commands are temporarily stored in a command queue, and transmitted to the non-volatile memory. According to each of the collection read operation commands, the non-volatile memory generates a corresponding encoded read data to the control circuit. After the error correction circuit performs a decoding operation on the encoded read data, a decoded content is generated and a first count of the decoded content is transmitted to a first register of the register set. After the encoded read data is decoded, a value stored in the first register is a first parameter and the first parameter is inputted into a prediction function of the function storage circuit.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: October 13, 2020
    Assignee: SOLID STATE STORAGE TECHNOLOGY CORPORATION
    Inventors: Shih-Jia Zeng, Tsu-Han Lu, Hsiao-Chang Yen