Patents by Inventor HSIAO-CHEN LI

HSIAO-CHEN LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240377721
    Abstract: A method includes: providing a photomask used in extreme ultra violet (EUV) lithography; determining a bias voltage of an electron beam writer system, the bias voltage applicable to an inspection operation and a repairing operation; and performing the repairing operation on the photomask by the electron beam writer system with the bias voltage.
    Type: Application
    Filed: July 23, 2024
    Publication date: November 14, 2024
    Inventors: HAO-MING CHANG, CHING-CHIH CHUANG, HSIAO-CHEN LI
  • Patent number: 12140858
    Abstract: A method includes: providing a photomask used in extreme ultra violet (EUV) lithography; receiving information of the photomask; determining a bias voltage of an electron beam writer system according to the information; and performing a repairing operation on the photomask by the electron beam writer system with the bias voltage.
    Type: Grant
    Filed: July 30, 2023
    Date of Patent: November 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hao-Ming Chang, Ching-Chih Chuang, Hsiao-Chen Li
  • Publication number: 20230367198
    Abstract: A method includes: providing a photomask used in extreme ultra violet (EUV) lithography; receiving information of the photomask; determining a bias voltage of an electron beam writer system according to the information; and performing a repairing operation on the photomask by the electron beam writer system with the bias voltage.
    Type: Application
    Filed: July 30, 2023
    Publication date: November 16, 2023
    Inventors: HAO-MING CHANG, CHING-CHIH CHUANG, HSIAO-CHEN LI
  • Patent number: 11815802
    Abstract: A method includes: providing a photomask, wherein the photomask includes a multilayer stack, a light-absorption layer, an anti-reflection coating and a light-absorption layer. The method further includes: receiving information on the photomask; determining a bias voltage according to the information; determining a scan recipe of an electron beam writer system based on the bias voltage; and performing a repairing operation on at least one of the anti-reflection coating and the light-absorption layer by the electron beam writer system with the scan recipe.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: November 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hao-Ming Chang, Ching-Chih Chuang, Hsiao-Chen Li
  • Publication number: 20230069679
    Abstract: A method includes: providing a photomask, wherein the photomask includes a multilayer stack, a light-absorption layer, an anti-reflection coating and a light-absorption layer. The method further includes: receiving information on the photomask; determining a bias voltage according to the information; determining a scan recipe of an electron beam writer system based on the bias voltage; and performing a repairing operation on at least one of the anti-reflection coating and the light-absorption layer by the electron beam writer system with the scan recipe.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Inventors: HAO-MING CHANG, CHING-CHIH CHUANG, HSIAO-CHEN LI