Abstract: A system includes a first mask, a second mask and a mask container. The first mask includes a first identification code and a second identification code. The second mask includes a third identification code and a fourth identification code. The mask container is configured to store the first mask and the second mask. The first identification code is different from the third identification code. In response to a pattern, for performing a photolithography process, on the first mask, that is different from a pattern on the second mask, the second identification code is different from the fourth identification code. In response to the pattern on the first mask being the same as the pattern on the second mask, the second identification code is the same as the fourth identification code.

Abstract: A system includes a first mask, a second mask and a mask container. The first mask includes a first identification code and a second identification code. The second mask includes a third identification code and a fourth identification code. The mask container is configured to store the first mask and the second mask. The first identification code is different from the third identification code. In response to a pattern, for performing a photolithography process, on the first mask, that is different from a pattern on the second mask, the second identification code is different from the fourth identification code. In response to the pattern on the first mask being the same as the pattern on the second mask, the second identification code is the same as the fourth identification code.

Abstract: A system includes a plurality of masks and a scanner device. A pattern of a semiconductor device is defined by each of the plurality of masks in a photolithography process. A first mask of the plurality of masks includes a first identification code configured to distinguish the first mask from remaining masks of the plurality of masks. The scanner device is configured to read the first identification code to select the first mask from the plurality of mask, in order to form the pattern of the semiconductor device on a substrate according to the first mask.

Abstract: A system includes a plurality of masks and a scanner device. A pattern of a semiconductor device is defined by each of the plurality of masks in a photolithography process. A first mask of the plurality of masks includes a first identification code configured to distinguish the first mask from remaining masks of the plurality of masks. The scanner device is configured to read the first identification code to select the first mask from the plurality of mask, in order to form the pattern of the semiconductor device on a substrate according to the first mask.