Abstract: A structure for suppressing current leakage and a semiconductor device including the same are provided. The structure for suppressing current leakage includes a substrate of a first conductivity type, a well region of the first conductivity type, an isolation structure and a PN junction diode. The well region is disposed in the substrate. The isolation structure is disposed on the well region. The PN junction diode is disposed on the isolation structure and configured to suppress current leakage of the semiconductor device.

Abstract: Provided is a termination structure including a substrate of a first conductivity type, an epitaxial layer of the first conductivity type, a single bulk isolation structure and a bulk doped region of a second conductivity type. The epitaxial layer is disposed on the substrate. The single bulk isolation structure is disposed on the epitaxial layer. The bulk doped region is disposed in the epitaxial layer below the single bulk isolation structure, wherein the doping depth of the bulk doped region has a gradient distribution. A method of forming a termination structure and a semiconductor device having the termination structure are also provided.

Abstract: A structure for suppressing current leakage and a semiconductor device including the same are provided. The structure for suppressing current leakage includes a substrate of a first conductivity type, a well region of the first conductivity type, an isolation structure and a PN junction diode. The well region is disposed in the substrate. The isolation structure is disposed on the well region. The PN junction diode is disposed on the isolation structure and configured to suppress current leakage of the semiconductor device.

Abstract: A method for manufacturing a semiconductor thick metal structure includes a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a Ti—TiN laminated structure is used as an anti-reflection layer to implement 4 ?m metal etching without residue. In the metal patterning step, N2 is used for the protection of a sidewall to implement on a 4 ?m metal concave-convex structure a tilt angle of nearly 90 degrees, and a main over-etching step is added to implement the smoothness of the sidewall of the 4 ?m metal concave-convex structure. A half-filled passivation filling structure is used to implement effective passivation protection of 1.5 um metal gaps having less than 4 um of metal thickness. Manufacturing of the 4 ?m thick metal structure having a linewidth/gap of 1.5 ?m/1.5 ?m is finally implemented.

Abstract: The present disclosure provides a semiconductor device and a method for fabricating a semiconductor buried layer. The method includes: preparing a substrate which includes a first oxide layer; forming a first buried layer region in the surface of the substrate by using a photoresist layer with a first buried layer region pattern as a mask, in which a doping state of the first buried layer region is different from a doping state of other region of the substrate; forming a second oxide layer on the surface of the substrate and the first buried layer region; and forming a second buried layer region in the surface of the substrate through self alignment process by using the second oxide layer as a mask. The method disclosed by the present disclosure reduces the complexity of the buried layer procedures and the cost thereof, as well as the probability of crystal defects.

Abstract: A method for manufacturing a semiconductor thick metal structure includes a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a Ti—TiN laminated structure is used as an anti-reflection layer to implement 4 ?m metal etching without residue. In the metal patterning step, N2 is used for the protection of a sidewall to implement on a 4 ?m metal concave-convex structure a tilt angle of nearly 90 degrees, and a main over-etching step is added to implement the smoothness of the sidewall of the 4 ?m metal concave-convex structure. A half-filled passivation filling structure is used to implement effective passivation protection of 1.5 um metal gaps having less than 4 um of metal thickness. Manufacturing of the 4 ?m thick metal structure having a linewidth/gap of 1.5 ?m/1.5 ?m is finally implemented.

Abstract: The present disclosure provides a semiconductor device and a method for fabricating a semiconductor buried layer. The method includes: preparing a substrate which includes a first oxide layer; forming a first buried layer region in the surface of the substrate by using a photoresist layer with a first buried layer region pattern as a mask, in which a doping state of the first buried layer region is different from a doping state of other region of the substrate; forming a second oxide layer on the surface of the substrate and the first buried layer region; and forming a second buried layer region in the surface of the substrate through self alignment process by using the second oxide layer as a mask. The method disclosed by the present disclosure reduces the complexity of the buried layer procedures and the cost thereof, as well as the probability of crystal defects.

Abstract: A PMOS thin film transistor (TFT) with self-align offset region for SRAM application is described. A source and a drain regions are above the gate region. A channel region is formed offset from the gate. An offset region is formed in the channel region having a length of 0.3 to 0.4 .mu.m. The key point of the present invention is the novel offset design of PMOS-TFT as load elements in an SRAM cell. Unlike the conventional offset design which is outside the gate, the offset region of the present invention is a disconnection region inside the gate which can be easily formed by so called self-align technique. Since the gate has a disconnected portion in the offset region, the trench-like profile of the offset region makes the load resistance in the offset region much higher to effectively reduce the leakage current.

Abstract: The present invention relates to a method of fabricating a SRAM cell that has a low stand-by current. A second polysilicon layer which is used as polysilicon resistor is exactly over a first polysilicon layer. The double polysilicon layer is utilized to reduced a stand-by current. A electric field is generated between the two layers caused by applying different voltage to the two polysilicon layer respectively, and the carriers in the second polysilicon layer will be repeled to form a depletion region, which will increase the resistance of the second polysilicon layer. Therefore, the stand-by current (Isb) will be reduced.