Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: The present invention discloses a stent for supporting a sidewall of a lumen which contains a first fluid. The stent comprises a stent body, a film and a photosensitizing layer. The stent body is disposed inside the lumen. The film is adapted to be penetrated by a light and covers the stent body. The photosensitizing layer is disposed on an outer surface of the film for receiving the light to generate a first object, and the film separates the photosensitizing layer and the first fluid. The film and the photosensitizing layer of the present invention can greatly reduce the needed dosage of the photosensitizer while maintaining the effective concentration of the photosensitizer around tumor cells.