Patents by Inventor Hsiao-Chu CHAO

Hsiao-Chu CHAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device design method, system and computer-readable medium
    Patent number: 8904337
    Abstract: A semiconductor device design system comprising at least one processor is configured to define a resistance-capacitance (RC) extraction tool for determining a distance between first and second through-semiconductor-vias extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second through-semiconductor-vias in the semiconductor substrate. The semiconductor device design system comprising the at least one processor is also configured to extract parasitic parameters of a coupling in the semiconductor substrate based on the distance determined by the RC extraction tool and a model of the coupling included in a simulation tool.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: December 2, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ching-Shun Yang, Ze-Ming Wu, Hsiao-Chu Chao, Yi-Kan Cheng
  • SEMICONDUCTOR DEVICE DESIGN METHOD, SYSTEM AND COMPUTER-READABLE MEDIUM
    Publication number: 20140189635
    Abstract: A semiconductor device design system comprising at least one processor is configured to define a resistance-capacitance (RC) extraction tool for determining a distance between first and second through-semiconductor-vias extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second through-semiconductor-vias in the semiconductor substrate. The semiconductor device design system comprising the at least one processor is also configured to extract parasitic parameters of a coupling in the semiconductor substrate based on the distance determined by the RC extraction tool and a model of the coupling included in a simulation tool.
    Type: Application
    Filed: March 7, 2014
    Publication date: July 3, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Shun YANG, Ze-Ming WU, Hsiao-Chu CHAO, Yi-Kan CHENG