Abstract: A light emitting package includes a metal plate, a plurality of LED chips, a plurality of leads and a molding compound. The metal plate has a first surface and a second surface, and is bent into two chip mounting portions, wherein an inclination angle is between the chip mounting portions. The LED chips are mounted on the first surface and the second surface of the chip mounting portions. The leads are disposed adjacent to the metal plate and electrically connected to the LED chips. The molding compound encapsulates the LED chips and a part of the lead.

Abstract: In one embodiment of the disclosure, a composite raw material and a method for forming the same are provided. The method includes sulfonating a polycyclic aromatic compound to form a polycyclic aromatic carbon sulfonate (PCAS); and mixing the polycyclic aromatic carbon sulfonate and a polyacrylonitrile (PAN) to form a composite raw material. In another embodiment of the disclosure, a carbon fiber containing the composite raw material described above and a method for forming the same are provided.

Abstract: A light emitting package includes a metal plate, a plurality of LED chips, a plurality of leads and a molding compound. The metal plate has a first surface and a second surface, and is bent into two chip mounting portions, wherein an inclination angle is between the chip mounting portions. The LED chips are mounted on the first surface and the second surface of the chip mounting portions. The leads are disposed adjacent to the metal plate and electrically connected to the LED chips. The molding compound encapsulates the LED chips and a part of the lead.

Abstract: In one embodiment of the disclosure, a composite raw material and a method for forming the same are provided. The method includes sulfonating a polycyclic aromatic compound to form a polycyclic aromatic carbon sulfonate (PCAS); and mixing the polycyclic aromatic carbon sulfonate and a polyacrylonitrile (PAN) to form a composite raw material. In another embodiment of the disclosure, a carbon fiber containing the composite raw material described above and a method for forming the same are provided.

Abstract: A semiconductor package is provided. The semiconductor package includes an organic substrate, a stiffness layer, and a chip subassembly. The stiffness layer is formed on the organic substrate. The chip subassembly is disposed on the stiffness layer. The chip subassembly includes at least a first chip, a second chip, and a third chip. The second chip is disposed between the first chip and the third chip in a stacked orientation. The first chip, the second chip, and the third chip have the function of proximity communication.

Abstract: The present invention relates to a semiconductor package having at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface upon which the first metal bumps are disposed and a plurality of first signal coupling pads disposed adjacent to the first active surface. The second layer chip is electrically connected to the first layer chip, and includes a second active surface that faces the first active surface and a plurality of second signal coupling pads. The second signal coupling pads are capacitively coupled to the first signal coupling pads so as to provide proximity communication between the first layer chip and the second layer chip. The package body encapsulates the first layer chip, the first metal bumps, and the second layer chip, and the first metal bumps are partially exposed.

Abstract: A semiconductor device package and a method of fabricating the same are disclosed. The semiconductor device package includes a substrate, a buffer structure, two active chips and a bridge chip. The substrate has a cavity, a first surface and a second surface opposite to the first surface. The cavity is extended from the first surface toward the second surface, and the buffer structure is disposed in the cavity. The active chips are disposed on and electrically connected to the first surface and around the cavity. The active chips both have a first active surface. The bridge chip is disposed in the cavity and above the buffer structure. The bridge chip has a second active surface, the second active surface faces the first active surfaces and is partially overlapped with the first active surfaces, the bridge chip is used for providing a proximity communication between the active chips.

Abstract: A first substrate has a first surface facing a second surface of the second substrate. The active chips are disposed on and electrically connected to the first surface, and spaced apart from each other by an interval, wherein the active chips respectively have a first active surface. The bridge chip is mechanically and electrically connected to the second surface, and has a second active surface partially overlapped with the first active surfaces of the active chips, such that the bridge chip is used for providing a proximity communication between the active chips. The connection structure is disposed between the first surface and the second surface for combining the first substrate and the second substrate.

Abstract: A semiconductor device package and a method of fabricating the same are provided. The semiconductor device package includes a substrate, a first chip, a jumper chip, a plurality of first bonding wires and a plurality of second bonding wires. The substrate has a plurality of contact pads. The first chip is disposed and electrically connected to the substrate via the first bonding wires. The jumper chip is disposed on the first chip and has a plurality of metal pads. Each of the metal pads is electrically connected to two contact pads of the substrate via two second bonding wires, respectively.

Abstract: A plasticizing agent and a composition for fabricating a polyacrylonitrile-based fiber precursor and a fabrication method of a polyacrylonitrile-based carbon fiber are provided. The plasticizing agent includes a copolymer represented by formula (I) or a derivative of formula (I): wherein R is methyl or ethyl, z?0.5 mol %, and y=99.5-85.0 mol %. The plasticizing agent has an intrinsic viscosity of between 0.20-0.40 dL/g. The composition for fabricating the polyacrylonitrile-based fiber precursor includes the plasticizing agent and a polyacrylonitrile-based copolymer having an intrinsic viscosity of between 0.41-0.75 dL/g.

Abstract: The advanced quad flat non-leaded package structure includes a carrier, a chip, a plurality of wires, and a molding compound. The carrier includes a die pad and a plurality of leads. The inner leads of the leads are designed to possess incurved sidewalls for enhancing the adhesion between the inner leads and the surrounding molding compound.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a substrate, at least one first chip, a dielectric layer and at least one second chip. The first chip is attached and electrically connected to the substrate. The first chip includes a first active surface and a plurality of first signal coupling pads. The first signal coupling pads are disposed adjacent to the first active surface. The dielectric layer is disposed on the first active surface. The second chip is attached and electrically connected to the substrate by metal bumps. The second chip includes a second active surface and a plurality of second signal coupling pads. The second active surface contacts the dielectric layer. The second signal coupling pads are disposed adjacent to the second active surface, and capacitively coupled to the first signal coupling pads of the first chip, so as to provide proximity communication between the first chip and the second chip.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface and a plurality of first signal coupling pads. The first signal coupling pads are disposed adjacent to the first active surface. The first metal bumps are disposed on the first active surface of the first layer chip. The second layer chip is electrically connected to the first layer chip, and includes a second active surface and a plurality of second signal coupling pads. The second active surface faces the first active surface of the first layer chip. The second signal coupling pads are disposed adjacent to the second active surface, and capacitively coupled to the first signal coupling pads of the first layer chip, so as to provide proximity communication between the first layer chip and the second layer chip.

Abstract: A semiconductor package and related methods are described. In one embodiment, the package includes a die pad, multiple leads, a chip, a package body, and a protective layer. The die pad includes an upper sloped portion, a lower sloped portion, and a peripheral edge region defining a cavity with a cavity bottom. Each lead includes an upper sloped portion and a lower sloped portion. The chip is disposed on the cavity bottom and is coupled to the leads. The package body is formed over the chip and the leads, substantially fills the cavity, and substantially covers the upper sloped portions of the die pad and the leads. The lower sloped portions of the die pad and the leads at least partially extend outwardly from a lower surface of the package body. The protective layer substantially covers the lower sloped portion and the lower surface of at least one lead.

Abstract: A wafer defines a plurality of chips arranged in array manner. Each chip includes at least one aluminum pad and a middle material. The middle material covers the aluminum pad and is mounted on the aluminum pad.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The first non-top metal layer is disposed adjacent to and spaced apart from the first active surface by a second distance. The first signal coupling pads are disposed on the first non-top metal layer. The second chip is electrically connected to the first chip. The second chip comprises a second active surface, at least one second non-top metal layer and a plurality of third signal coupling pads. The second active surface faces the first active surface of the first chip. The second non-top metal layer is disposed adjacent to and spaced apart from the second active surface by a fourth distance.

Abstract: A wire bonding structure includes a chip and a bonding wire. The chip includes a base material, at least one first metallic pad, a re-distribution layer and at least one second metallic pad. The first metallic pad is disposed on the base material. The re-distribution layer has a first end and a second end, and the first end is electrically connected to the first metallic pad. The second metallic pad is electrically connected to the second end of the re-distribution layer. The bonding wire is bonded to the second metallic pad.

Abstract: The present invention relates to a semiconductor package. The semiconductor package includes a substrate, a first chip and a second chip. The substrate has a first surface, a second surface and at least one through hole. The first chip is disposed adjacent to the first surface of the substrate. The first chip includes a first active surface and a plurality of first signal pads. Part of the first active surface is exposed to the through hole. The position of the first signal pads corresponds to the through hole. The second chip is disposed adjacent to the second surface. The second chip includes a second active surface and a plurality of second signal pads. Part of the second active surface is exposed to the through hole. The position of the second signal pads corresponds to the through hole, and the second signal pads are capacitively coupled to the first signal pads of the first chip, so as to provide proximity communication between the first chip and the second chip.

Abstract: The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The first non-top metal layer is disposed adjacent to and spaced apart from the first active surface by a second distance. The first signal coupling pads are disposed on the first non-top metal layer. The second chip is electrically connected to the first chip. The second chip comprises a second active surface, at least one second non-top metal layer and a plurality of third signal coupling pads. The second active surface faces the first active surface of the first chip. The second non-top metal layer is disposed adjacent to and spaced apart from the second active surface by a fourth distance.

Abstract: The present invention relates to a semiconductor package. The semiconductor package includes a substrate, a first chip and an interposer. The first chip is mechanically and electrically connected to the substrate. Some signal pads of the interposer are capacitively coupled to some signal pads of the first chip, so as to provide proximity communication between the first chip and the interposer. Whereby, the capacitively coupled signal pads can be made in fine pitch, and therefore the size of the semiconductor package is reduced and the density of the signal pads is increased.