Abstract: Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

Abstract: Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

Abstract: Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

Abstract: The disclosure provides a thermoelectric conversion structure and its use in heat dissipation device. The thermoelectric conversion structure includes a thermoelectric element, a first electrode and an electrically conductive heat-blocking layer. The thermoelectric element includes a first end and a second end opposite to each other. The first electrode is located at the first end of the thermoelectric element. The electrically conductive heat-blocking layer is between the thermoelectric element and the first electrode.

Abstract: A thermoelectric conversion device and a selective absorber film are provided. The thermoelectric conversion device includes at least one first selective absorber film, a cold terminal substrate, at least one first thermoelectric element pair, a first conductive substrate and a second conductive substrate. The first selective absorber film non-contactly absorbs a preset limited wavelength band of heat radiation. The first thermoelectric element pair is disposed between the first selective absorber film and the cold terminal substrate, and includes a first N-type thermoelectric element and a first P-type thermoelectric element. The first conductive substrate is disposed between the cold terminal substrate and the first N-type thermoelectric element. The second conductive substrate is disposed between the cold terminal substrate and the first P-type thermoelectric element.

Abstract: Operations for integrating thermoelectric devices in Fin FET technology may be implemented in a semiconductor device having a thermoelectric device. The thermoelectric device includes a substrate and a fin structure disposed on the substrate. The thermoelectric device includes a first connecting layer and a second connecting layer disposed on opposing ends of the fin structure. The thermoelectric device includes a first thermal conductive structure thermally and a second thermal conductive structure thermally coupled to the opposing ends of the fin structure. The fin structure may be configured to transfer heat from one of the first thermal conductive structure or the second thermal conductive structure to the other thermal conductive structure based on a direction of current flow through the fin structure. In this regard, the current flow may be adjusted by a power circuit electrically coupled to the thermoelectric device.

Abstract: The power consumption detecting device is without external power supply. It installed on the electric equipment. This self-powered detecting device comprises at least one thermoelectric element, a processor and a wireless transmitter. As the electric equipment working, the temperature difference on the surface of the electric equipment drives the thermoelectric element to generate a voltage signal. Therefore, a self-powered thermoelectric detecting device will decrease standby power demand. The amplitude of voltage signal is proportion to the temperature difference. In the same time, the power generated by thermoelectric element can be a power source of the wireless transmitter and the chip or processor, so the supply of exterior power is no needed. The wireless transmitter transmits a signal, which is according to the power consumption of electric equipment or electric appliance, to the control center.

Abstract: A thermoelectric conversion device and a selective absorber film are provided. The thermoelectric conversion device includes at least one first selective absorber film, a cold terminal substrate, at least one first thermoelectric element pair, a first conductive substrate and a second conductive substrate. The first selective absorber film non-contactly absorbs a preset limited wavelength band of heat radiation. The first thermoelectric element pair is disposed between the first selective absorber film and the cold terminal substrate, and includes a first N-type thermoelectric element and a first P-type thermoelectric element. The first conductive substrate is disposed between the cold terminal substrate and the first N-type thermoelectric element. The second conductive substrate is disposed between the cold terminal substrate and the first P-type thermoelectric element.

Abstract: The power consumption detecting device is without external power supply. It installed on the electric equipment. This self-powered detecting device comprises at least one thermoelectric element, a processor and a wireless transmitter. As the electric equipment working, the temperature difference on the surface of the electric equipment drives the thermoelectric element to perform a voltage signal. Therefore, a self-powered thermoelectric detecting device will decrease standby power demand. The amplitude of voltage signal is proportion to the temperature difference. In the same time, the power generated by thermoelectric element may be another power source of the wireless transmitter and the chip or processor, so the supply of exterior power is no needed. The wireless transmitter transmits a signal, which is according to the power consumption of electric equipment or electric appliance, to the control center.