Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a semiconductor substrate. One or more isolation structures are arranged within one or more trenches disposed along a first surface of the semiconductor substrate. The one or more isolation structures are separated from opposing sides of the image sensing element by non-zero distances. The one or more trenches are defined by sidewalls and a horizontally extending surface of the semiconductor substrate. A doped region is laterally arranged between the sidewalls of the semiconductor substrate defining the one or more trenches and is vertically arranged between the image sensing element and the first surface of the semiconductor substrate.

Abstract: A method includes performing an anisotropic etching on a semiconductor substrate to form a trench. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, with the surface layer exposed to the trench. The rounded bottom of the trench is etched to form a slant straight bottom surface. The trench is filled to form a trench isolation region in the trench.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall that extends from the front surface to the back surface. The exemplary method further includes forming an interconnect structure over the front surface of the substrate, removing a portion of the substrate to expose a metal interconnect layer of the interconnect structure, and forming a bonding pad on the interconnect structure in a manner so that the bonding pad is electrically coupled to the exposed metal interconnect layer and separated from the sidewall of the substrate.

Abstract: A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.

Abstract: A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

Abstract: A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

Abstract: A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.

Abstract: A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.

Abstract: A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

Abstract: Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall that extends from the front surface to the back surface. The exemplary method further includes forming an interconnect structure over the front surface of the substrate, removing a portion of the substrate to expose a metal interconnect layer of the interconnect structure, and forming a bonding pad on the interconnect structure in a manner so that the bonding pad is electrically coupled to the exposed metal interconnect layer and separated from the sidewall of the substrate.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensing element disposed within a semiconductor substrate. One or more isolation structures are arranged within one or more trenches disposed along a first surface of the semiconductor substrate. The one or more isolation structures are separated from opposing sides of the image sensing element by non-zero distances. The one or more trenches are defined by sidewalls and a horizontally extending surface of the semiconductor substrate. A doped region is laterally arranged between the sidewalls of the semiconductor substrate defining the one or more trenches and is vertically arranged between the image sensing element and the first surface of the semiconductor substrate.

Abstract: A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

Abstract: Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall that extends from the front surface to the back surface. The exemplary method further includes forming an interconnect structure over the front surface of the substrate, removing a portion of the substrate to expose a metal interconnect layer of the interconnect structure, and forming a bonding pad on the interconnect structure in a manner so that the bonding pad is electrically coupled to the exposed metal interconnect layer and separated from the sidewall of the substrate.

Abstract: A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.

Abstract: An image sensor device structure is provided. The image sensor device structure includes a substrate, and the substrate is doped with a first conductivity type. The image sensor device structure includes a light-sensing region formed in the substrate, and the light-sensing region is doped with a second conductivity type that is different from the first conductivity type. The image sensor device structure further includes a doping region extended into the light-sensing region, and the doping region is doped with the first conductivity type. The image sensor device structure also includes a plurality of color filters formed on the doping region.

Abstract: A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an image sensor. The method includes implanting a dopant into a substrate to form a doped region and implanting one or more additional dopants into the substrate to form an image sensing element between the doped region and a front-side of the substrate. The doped region directly contacts a boundary of the image sensing element that is furthest from the front-side of the substrate. The method further includes etching the substrate to form one or more trenches extending into a back-side of the substrate. The back-side of the substrate opposes the front-side of the substrate. The method further includes filling the one or more trenches with one or more dielectric materials to form isolation structures.

Abstract: The present disclosure relates to a CMOS image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. A back-side deep trench isolation (BDTI) structure is disposed between adjacent pixel regions, extending from a back-side of the substrate to a position within the substrate. The BDTI structure comprises a doped layer lining a sidewall surface of a deep trench and a dielectric fill layer filling a remaining space of the deep trench. By forming the disclosed BDTI structure that functions as a doped well and an isolation structure, the implantation processes from a front-side of the substrate is simplified, and thus the exposure resolution, the full well capacity of the photodiode, and the pinned voltage is improved.