Patents by Inventor Hsiao-Hui YU

Hsiao-Hui YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MIM capacitor and method of forming the same
    Patent number: 9577026
    Abstract: According to an exemplary embodiment, a method of forming a MIM capacitor is provided. The method includes the following operations: providing a first metal layer; providing a dielectric layer over the first metal layer; providing a second metal layer over the dielectric layer; etching the second metal layer to define the metal-insulator-metal capacitor; and oxidizing a sidewall of the second metal layer. According to an exemplary embodiment, a MIM capacitor is provided. The MIM capacitor includes a first metal layer; a dielectric layer over the first metal layer; a second metal layer over the dielectric layer; and an oxidized portion in proximity to the second metal layer and made of oxidized second metal layer.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: February 21, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chih-Wei Kao, Chun-Chieh Huang, Hsiao-Hui Yu, Hao-Wen Hsu, Pin-Cheng Hsu, Chia-Der Chang
  • MIM CAPACITOR AND METHOD OF FORMING THE SAME
    Publication number: 20150349047
    Abstract: According to an exemplary embodiment, a method of forming a MIM capacitor is provided. The method includes the following operations: providing a first metal layer; providing a dielectric layer over the first metal layer; providing a second metal layer over the dielectric layer; etching the second metal layer to define the metal-insulator-metal capacitor; and oxidizing a sidewall of the second metal layer. According to an exemplary embodiment, a MIM capacitor is provided. The MIM capacitor includes a first metal layer; a dielectric layer over the first metal layer; a second metal layer over the dielectric layer; and an oxidized portion in proximity to the second metal layer and made of oxidized second metal layer.
    Type: Application
    Filed: May 27, 2014
    Publication date: December 3, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chih-Wei KAO, Chun-Chieh HUANG, Hsiao-Hui YU, Hao-Wen HSU, Pin-Cheng HSU, Chia-Der CHANG