Abstract: A keyswitch structure includes a base plate, a keycap, and a support mechanism. The support mechanism supports the keycap above the base plate. An outer support of the support mechanism includes a reinforcing body and a connecting structure fixed on the reinforcing body. The outer support is connected to the base plate and the keycap through the connecting structure. In an embodiment, the reinforcing body has two openings. Two inner supports of the support mechanism are pivotally connected to the connecting structure and are located in the two openings, respectively. In another embodiment, the reinforcing body as a whole extends along a plane. The reinforcing body has a bent fringe, which is inserted into the connecting structure and is not perpendicular to the plane.

Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. The method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. Each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. The method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. A first average width of the first contact structure is substantially equal to a second average width of the second contact structure.

Abstract: A system and a method for identifying baby needs are disclosed. The system stores a heart rate variability (HRV) feature model comprising a relationship between HRV features and baby needs. The system receives a time-series skin image signal of a baby, and converts the time-series skin image signal into a target photoplethysmography (PPG) signal. The system also calculates a set of target HRV features according to the target PPG signal, and determines a target need of the baby according to the HRV feature model and the set of target HRV features.

Abstract: Disclosed is an electric device control system comprising an electric device control system and an intelligent remote control. Each electric device is electrically connected to a light sensing device, wherein the electric device is controlled by the light sensing device. The intelligent remote control comprises a light transmitter, a first wireless communication unit and a first controller. The light transmitter provides a high energy level visible light beam to a light sensing device, to make the light sensing device provide a wireless identification signal. The first wireless communication unit receives the wireless identification signal. The first controller is electrically connected to the first wireless communication unit. The first controller controls a coding set to switch according to the wireless identification signal, and controls the first wireless communication unit according to the coding set to output a wireless control signal to the light sensing device for controlling the electric device.