Abstract: A method includes forming a metal layer over a dielectric layer; forming hard masks over the metal layer; etching the metal layer using the hard masks as etch mask to form metal features; selectively forming dielectric liners on opposite sidewalls of each of the metal features, while leaving surfaces of the hard masks and the dielectric layer exposed by the dielectric liners; and forming an inter-metal dielectric layer laterally surrounding the metal features.

Abstract: A semiconductor device package, along with methods of forming such, are described. The semiconductor device package includes a first semiconductor device structure having a first substrate, two first devices disposed on the first substrate, a first interconnection structure disposed over the first substrate and the two first devices, and a first thermal feature disposed through the first substrate and the first interconnection structure. The semiconductor device package further includes a second semiconductor device structure disposed over the first semiconductor device structure having a second interconnection structure disposed over the first interconnection structure, a second substrate disposed over the second interconnection structure, two second devices disposed between the second substrate and the second interconnection structure, and a second thermal feature disposed through the second substrate and the second interconnection structure.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an electrical interconnect structure, a thermal interconnect structure, and a thermal passivation layer over a substrate. The electrical interconnect structure includes interconnect vias and interconnect wires embedded within interconnect dielectric layers. The thermal interconnect structure is arranged beside the electrical interconnect structure and includes thermal vias, thermal wires, and/or thermal layers. Further, the thermal interconnect structure is embedded within the interconnect dielectric layers. The thermal passivation layer is arranged over a topmost one of the interconnect dielectric layers. The thermal interconnect structure has a higher thermal conductivity than the interconnect dielectric layers.

Abstract: A method of forming a semiconductor structure is provided. A first dielectric layer is formed over a substrate. A first metal pattern is formed through the first dielectric layer. A metal cap is formed over the first metal pattern. A surface portion of the metal cap is silicided to form a metal silicide pattern. A composite etch stop layer is formed on the first dielectric layer and the metal silicide pattern. A second dielectric layer is formed on the composite etch stop structure. A second metal pattern is formed through the second dielectric layer and the composite etch stop structure and landed on the metal silicide pattern.

Abstract: A semiconductor structure includes a base structure including a substrate and a device unit disposed on a front surface of the substrate, a front dielectric portion disposed on the front surface to cover the device unit, a front conductive layer disposed in the front dielectric portion and connected to the device unit, a back dielectric unit disposed on a back surface of the substrate opposite to the front surface and including at least one first part which includes a first dielectric portion having a thermal conductivity which is greater than that of the front dielectric portion, and a back conductive unit which is disposed in the back dielectric unit and connected to the device unit, and which includes at least one first conductive layer disposed in the at least one first part.

Abstract: A method for forming a semiconductor device structure is disclosed. The method includes forming one or more first conductive features in a first dielectric layer, forming a metal layer on each of the one or more first conductive features, forming a first etch stop layer over the metal layer, forming a second etch stop layer on the first etch stop layer, wherein the second etch stop layer is a nitrogen-free layer. The method also includes forming a second dielectric layer on the second etch stop layer, and forming a second conductive feature in the second dielectric layer through the second etch stop layer, the first etch stop layer, and the metal layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an electrical interconnect structure, a thermal interconnect structure, and a thermal passivation layer over a substrate. The electrical interconnect structure includes interconnect vias and interconnect wires embedded within interconnect dielectric layers. The thermal interconnect structure is arranged beside the electrical interconnect structure and includes thermal vias, thermal wires, and/or thermal layers. Further, the thermal interconnect structure is embedded within the interconnect dielectric layers. The thermal passivation layer is arranged over a topmost one of the interconnect dielectric layers. The thermal interconnect structure has a higher thermal conductivity than the interconnect dielectric layers.

Abstract: An interconnection structure includes a first dielectric layer, a first conductive feature disposed in the first dielectric layer, a second dielectric layer on the first dielectric layer, a conductive layer disposed in the second dielectric layer, and a liner layer disposed between the conductive layer and the second dielectric layer, wherein the liner layer has a portion extended over to a top surface of the second dielectric layer. The structure also includes a third dielectric layer on the second dielectric layer, a second conductive feature disposed in the third dielectric layer, wherein the second conductive feature has a portion in direct contact with the conductive layer. The structure further includes a first capping layer disposed between the second conductive feature and the third dielectric layer, and a portion of the first capping layer is extended to cover a top surface of the second conductive feature.

Abstract: An interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, a conductive layer, a liner layer, a third dielectric layer, a second conductive feature, and a first capping layer. The first conductive feature is disposed in the first dielectric layer. The second dielectric layer is formed on the first dielectric layer, and the second dielectric layer is in direct contact with the first dielectric layer. The conductive layer is disposed in the second dielectric layer. The liner layer is disposed between the conductive layer and the second dielectric layer. The third dielectric layer is formed on the second dielectric layer. The second conductive feature is disposed in the third dielectric layer. The first capping layer is disposed between the second conductive feature and the third dielectric layer.

Abstract: A self-aligned interconnection structure includes a dielectric layer, a conductive feature, a capping layer, a first barrier layer and a second barrier layer. The conductive feature is formed in the dielectric layer, and the conductive feature has a top surface. The capping layer is disposed on the top surface of the conductive feature, and the capping layer does not cover the dielectric layer. The first barrier layer is disposed on the capping layer, and the first barrier layer does not cover the dielectric layer. The second barrier layer covers the first barrier layer and the dielectric layer, and the first barrier layer and the second barrier layer are formed of different materials.

Abstract: An interconnection structure includes a first dielectric layer, a first conductive layer disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a second conductive layer disposed in the second dielectric layer in electrical contact with the first conductive layer, a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer comprises silicon carbon-nitride (SiCN) based material, and a resistor device disposed in the third dielectric layer.

Abstract: A method for forming an interconnect structure is described. In some embodiments, the method includes forming a conductive layer, removing portions of the conductive layer to form a via portion extending upward from a bottom portion, forming a sacrificial layer over the via portion and the bottom portion, recessing the sacrificial layer to a level substantially the same or below a level of a top surface of the bottom portion, forming a first dielectric material over the via portion, the bottom portion, and the sacrificial layer, and removing the sacrificial layer to form an air gap adjacent the bottom portion.

Abstract: A method for making a semiconductor structure, including: forming a conductive layer; forming a patterned mask layer on the conductive layer; patterning the conductive layer to form a recess and a conductive feature; forming a first dielectric layer over the patterned mask layer and filling the recess with the first dielectric layer; patterning the first dielectric layer to form an opening; selectively forming a blocking layer in the opening; forming an etch stop layer to cover the first dielectric layer and exposing the blocking layer; forming on the etch stop layer a second dielectric layer; forming a second dielectric layer on the etch stop layer; patterning the second dielectric layer to form a through hole and exposing the conductive feature; and filling the through hole with an electrically conductive material to form an interconnect electrically connected to the conductive feature.

Abstract: A method for manufacturing a semiconductor device includes preparing an electrically conductive structure including a plurality of electrically conductive features, conformally forming a thermally conductive dielectric capping layer on the electrically conductive structure, conformally forming a dielectric coating layer on the thermally conductive dielectric capping layer, filling a sacrificial material into recesses among the electrically conductive features, recessing the sacrificial material to form sacrificial features in the recesses, forming a sustaining layer over the dielectric coating layer to cover the sacrificial features, and removing the sacrificial features to form air gaps covered by the sustaining layer. The thermally conductive dielectric capping layer has a thermal conductivity higher than that of the dielectric coating layer.

Abstract: An interconnect structure includes a dielectric layer, a conductive feature, a conductive layer, a capping layer, a support layer and an etch stop layer. The conductive feature is disposed in the dielectric layer. A first portion of the conductive layer is disposed over the first conductive feature, and a second portion of the conductive layer is disposed over the dielectric layer. A first portion of the capping layer is in contact with the first portion of the conductive layer, a second portion of the capping layer is in contact with the second portion of the conductive layer, and a third portion of the capping layer is in contact with the dielectric layer. An air gap is defined by the support layer and the capping layer. The etch stop layer is disposed over the second portion of the conductive layer, the second portion of the capping layer and the support layer.

Abstract: A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.

Abstract: A semiconductor structure includes a substrate with a conductive structure thereon, a first dielectric layer, a conductive feature and a second dielectric layer. The first dielectric layer is disposed on the substrate. The conductive feature is formed in the first dielectric layer and is electrically connected to the conductive structure. The second dielectric layer is formed on the first dielectric layer and is disposed adjacent to the conductive feature. The first dielectric layer and the second dielectric layer are made of different materials.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a device layer including a first surface opposite a second surface. A first thermal dispersion layer overlies the device layer. A second thermal dispersion layer underlies the device layer. A first thermal conductivity of the first thermal dispersion layer is different from a second thermal conductivity of the second thermal dispersion layer.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first conductive layer formed over a substrate, and an air gap structure adjacent to the first conductive layer. The semiconductor device structure includes a support layer formed over the air gap structure, and a sidewall surface of the support layer is aligned with a sidewall surface of the air gap structure.

Abstract: A method according to the present disclosure includes receiving a workpiece that includes a first conductive feature embedded in a first dielectric layer, selectively depositing a capping layer over the first conductive feature, depositing a first etch stop layer (ESL) over the capping layer, depositing a glue layer over the first ESL, depositing a second ESL over the glue layer, depositing a second dielectric layer over the second ESL, forming an opening through the second dielectric layer, the second ESL, the glue layer, and the first ESL to expose the capping layer, and forming a second conductive feature in the opening. A density of the second ESL is greater than a density of the first ESL.