Abstract: A cutter wheel is disclosed, which comprises a cutter wheel body, a cutting unit, and a solder layer. The cutter wheel body consists of the first substrate and the second substrate, wherein each substrate has an inner surface and an outer surface. The inner surface of the first substrate is treated with surface modification. The cutting unit can be formed on a rough surface. The solder layer is formed between the cutting unit and the second substrate. The present invention also provides a method for manufacturing the cutter wheel as mentioned above.

Abstract: A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.

Abstract: A method for manufacturing a diamond film is provided. The material with a low thermal decomposition point is used as a substrate. A buffer layer is formed on the substrate by coating or deposition, and then a diamond film is coated thereon, fitting the shape of the required diamond film. With the buffer layer, the coating or deposition uniformity of the diamond film is improved, and the problems such as thermal stress cracking and assembly damage are solved as well. During a subsequent process of forming the diamond film, the substrate is thermally decomposed due to a high temperature, such that the problems such as stripping and die loss are overcome.

Abstract: A light emitting diode device and a method for manufacturing the same are disclosed. The method comprises following steps: (A) providing a substrate; (B) forming a SiC film on the surface of the substrate; (C) forming a diamond layer on the surface of the SiC film and removing the substrate, wherein the diamond layer has a first surface and a second surface adjacent to the surface of the SiC film; (D) forming a semiconductor epitaxy layer on the surface of SiC film by epitaxial growth process; and (E) forming a first electrode on the surface of the semiconductor epitaxy layer and forming a metal layer on the first surface of the diamond layer. Accordingly, the manufacturing method of the present invention can efficiently reduce manufacturing cost and simplify manufacturing process to provide LEDs with high heat dissipation efficiency and a high-quality epitaxy layer.

Abstract: A light emitting diode device and a method for manufacturing the same are disclosed. The method comprises following steps: (A) providing a substrate; (B) forming a diamond layer on the surface of the substrate; (C) forming a doping region on the upper surface of the diamond layer; (D) bonding a semiconductor epitaxy layer on the upper surface of the diamond layer; and (E) removing the substrate. Accordingly, owing to the absence of an adhesion layer necessary for a conventional LED, the LED of the present invention can reduce the blockage for heat transfer caused by a resin adhesion layer and light obscuration caused by a metal adhesion layer so as to enhance the efficiency of heat dissipation of LEDs, simplify the process, and enhance the performance and the stability of products.

Abstract: A CVD (chemical vapor deposition) reactor is disclosed to include a reaction chamber, a gas heater, a substrate holder, a substrate heater, hot filaments, an electric field generator, and a magnetic field generator. By means of preheating applied gas with the gas heater and heating the substrate with the substrate holder and the hot filaments, the gas and substrate heating speed is accelerated, thereby saving much deposition time and greatly improving deposition efficiency. Matching with the electric field generator and the magnetic field generator, the ionization of applied gas in the reaction chamber is enhanced and, the uniformity of the thickness of deposition of metal substance on the surface of the substrate(s) is increased.

Abstract: A CVD (chemical vapor deposition) reactor having a horizontal coating plane and power source-controlled hot filaments is disclosed. The CVD reactor has a chamber, rotating electrodes provided inside the chamber, hot filaments connected to the rotating electrodes to form a horizontal coating plane above a substrate, and a rotating power source, which is controlled to rotate the rotating electrodes and to further stretch the hot filaments when the hot filaments expand due to a temperature change, prohibiting the hot filaments from touching the substrate.

Abstract: A CVD (chemical vapor deposition) reactor having a vertical coating plane and power source-controlled hot filaments is disclosed. The CVD reactor has a chamber, one or a number of rotating electrodes, hot filaments, and a rotating power source at each rotating electrode. When the hot filaments expand due to hot, the rotating power source rotates the rotating electrode(s) to stretch the hot filaments and to further maintain the predetermined tension of the hot filaments, thereby preventing vibration of the hot filaments so as not to interfere with the performance of the coating work and not to damage the substrate upon flowing of a gas in the chamber.

Abstract: A mold for glass has a base and a diamond protective film deposited on the base. Due to the quality of the diamond protective film, the base can be protected substantially with a high temperature in the process of manufacturing the glass to extend the lifespan of the mold.

Abstract: A method for fabricating a diamond diaphragm is provided, wherein a non-homogeneous energy, generated by a hot wire, plasma, or flame, for activating and dissociating gas is provided to pass above a mold. Due to different distances between a curved surface of the mold and the non-homogeneous energy, different heating effects are produced on the surface of the mold. When the diamond material is coated and grows on the surface of the mold, the growth rate of the diamond material appears to be different by location, thus, the diamond diaphragm has a non-homogeneous vibration characteristic, and thereby having a response bandwidth wider than that of a diamond diaphragm with homogeneous vibration characteristic.

Abstract: A method for manufacturing a diamond film is provided. The material with a low thermal decomposition point is used as a substrate. A buffer layer is formed on the substrate by coating or deposition, and then a diamond film is coated thereon, fitting the shape of the required diamond film. With the buffer layer, the coating or deposition uniformity of the diamond film is improved, and the problems such as thermal stress cracking and assembly damage are solved as well. During a subsequent process of forming the diamond film, the substrate is thermally decomposed due to a high temperature, such that the problems such as stripping and die loss are overcome.

Abstract: A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.

Abstract: A diamond substrate and a method for fabricating the same are provided, wherein a protection layer is formed on one surface of a diamond layer in the process of forming the diamond layer by chemical vapor deposition process, for reducing the deformation of the diamond layer. Thereby the deformation of diamond substrate falls within the range of permitted tolerance of deformation, so that the performance of the diamond substrate is enhanced.