Patents by Inventor Hsiao-Lin Chen

Hsiao-Lin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMORY STRUCTURE AND MEMORY DEVICE
    Publication number: 20070257290
    Abstract: A memory structure, a memory device and a manufacturing method thereof are provided. First, a substrate is provided and a dielectric layer is formed over the substrate. Then, a pattern is formed in the dielectric layer. An amorphous silicon layer is formed in the pattern and over the dielectric layer. The amorphous silicon layer is patterned to form an electrode over the pattern. Then, a spacer is formed on the sidewall of the electrode. A selective hemispherical grains (HSGS) layer is formed over the surface of the electrode and the surface of the spacer.
    Type: Application
    Filed: July 16, 2007
    Publication date: November 8, 2007
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Tzong Yang, Wan-Chun Liao, Sheng-Chin Lee, Hsiao-Lin Chen, Chien-Hao Lee, Shr-Wei Shiu
  • MEMORY STRUCTURE, MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20070166910
    Abstract: A memory structure, a memory device and a manufacturing method thereof are provided. First, a substrate is provided and a dielectric layer is formed over the substrate. Then, a pattern is formed in the dielectric layer. An amorphous silicon layer is formed in the pattern and over the dielectric layer. The amorphous silicon layer is patterned to form an electrode over the pattern. Then, a spacer is formed on the sidewall of the electrode. A selective hemispherical grains (HSGS) layer is formed over the surface of the electrode and the surface of the spacer.
    Type: Application
    Filed: January 16, 2006
    Publication date: July 19, 2007
    Inventors: Ming-Tzong Yang, Wan-Chun Liao, Sheng-Chin Lee, Hsiao-Lin Chen, Chien-Hao Lee, Shr-Wei Shiu