Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A high-voltage semiconductor device includes a substrate, a body region, a well region, a bulk region, a source, a drain, an isolation region, a gate structure, and a resistor. The body region and the well region are disposed in the substrate. The bulk region and the source are disposed in the body region. The drain is disposed in the well region. The isolation region is disposed on the well region. The isolation region is disposed between the drain and the source. The gate structure is disposed on the substrate. The gate structure extends onto a portion of the isolation region. The resistor is disposed on the isolation region. The resistor is electrically connected to the bulk region and the drain, or the resistor is electrically connected to the drain and/or the source.

Abstract: A high-voltage semiconductor device includes a substrate, a body region, a well region, a bulk region, a source, a drain, an isolation region, a gate structure, and a resistor. The body region and the well region are disposed in the substrate. The bulk region and the source are disposed in the body region. The drain is disposed in the well region. The isolation region is disposed on the well region. The isolation region is disposed between the drain and the source. The gate structure is disposed on the substrate. The gate structure extends onto a portion of the isolation region. The resistor is disposed on the isolation region. The resistor is electrically connected to the bulk region and the drain, or the resistor is electrically connected to the drain and/or the source.

Abstract: A semiconductor structure including a substrate, a first well, a field oxide layer, a first conductive line and a second conductive line is provided. The substrate has a first conductivity type. The first well is formed on the substrate and has a second conductivity type. The field oxide layer is disposed on the first well. The first conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The second conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The first conductive line is spaced apart from the second conductive line.

Abstract: A semiconductor structure including a substrate, a first well, a field oxide layer, a first conductive line and a second conductive line is provided. The substrate has a first conductivity type. The first well is formed on the substrate and has a second conductivity type. The field oxide layer is disposed on the first well. The first conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The second conductive line is formed on the field oxide layer and is in direct contact with the field oxide layer. The first conductive line is spaced apart from the second conductive line.

Abstract: A high-voltage semiconductor device includes a MOS device and a resistor device. The MOS device has a source, a drain, a drain insulation region adjacent to the drain, and a gate adjacent to the source. The resistor device is formed on the drain insulation region and is electrically connected to the drain. The resistor device has a plurality of resistor sections connected in series, and each of the plurality of resistor sections has a curved shape.

Abstract: A high-voltage semiconductor device includes a MOS device and a resistor device. The MOS device has a source, a drain, a drain insulation region adjacent to the drain, and a gate adjacent to the source. The resistor device is formed on the drain insulation region and is electrically connected to the drain. The resistor device has a plurality of resistor sections connected in series, and each of the plurality of resistor sections has a curved shape.

Abstract: A protein carrier containing an antigen presenting cell binding domain and a cysteine-rich domain. Also described herein is an immunoconjugate containing the protein carrier with an antigen conjugated to multiple cysteine residues in the cysteine-rich domain, and an immune composition containing the immunoconjugate and an adjuvant, as well as their uses in eliciting immune responses.

Abstract: A protein carrier containing an antigen presenting cell binding domain and a cysteine-rich domain. Also described herein is an immunoconjugate containing the protein carrier with an antigen conjugated to multiple cysteine residues in the cysteine-rich domain, and an immune composition containing the immunoconjugate and an adjuvant, as well as their uses in eliciting immune responses.