Patents by Inventor Hsiao-Lun CHANG
Hsiao-Lun CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230305404Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.Type: ApplicationFiled: May 31, 2023Publication date: September 28, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Lun CHANG, Chueh-Chi KUO, Tsung-Yen LEE, Tzung-Chi FU, Li-Jui CHEN, Po-Chung CHENG, Che-Chang HSU
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Patent number: 11703763Abstract: A reticle, a reticle container and a method of lithography process are provided. The reticle container includes: a cover configured to protect a reticle, a baseplate, and a discharging device on the baseplate. The baseplate has: a top surface configured to engage to the cover and a bottom surface opposite to the top surface. The discharging device is configured to neutralize static charges accumulated on the reticle.Type: GrantFiled: April 29, 2022Date of Patent: July 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Lun Chang, Chueh-Chi Kuo, Tsung-Yen Lee, Tzung-Chi Fu, Li-Jui Chen, Po-Chung Cheng, Che-Chang Hsu
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Publication number: 20230107078Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.Type: ApplicationFiled: December 9, 2022Publication date: April 6, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG
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Patent number: 11599030Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.Type: GrantFiled: June 1, 2021Date of Patent: March 7, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang
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Patent number: 11528798Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.Type: GrantFiled: June 3, 2021Date of Patent: December 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yu Tu, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20220369447Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: Wei-Shin CHENG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG, Hsiao-Lun CHANG
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Patent number: 11470710Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.Type: GrantFiled: December 28, 2020Date of Patent: October 11, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Shin Cheng, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng, Hsiao-Lun Chang
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Publication number: 20220260901Abstract: A reticle, a reticle container and a method of lithography process are provided. The reticle container includes: a cover configured to protect a reticle, a baseplate, and a discharging device on the baseplate. The baseplate has: a top surface configured to engage to the cover and a bottom surface opposite to the top surface. The discharging device is configured to neutralize static charges accumulated on the reticle.Type: ApplicationFiled: April 29, 2022Publication date: August 18, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Lun CHANG, Chueh-Chi KUO, Tsung-Yen LEE, Tzung-Chi FU, Li-Jui CHEN, Po-Chung CHENG, Che-Chang HSU
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Patent number: 11320733Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.Type: GrantFiled: October 8, 2020Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Lun Chang, Chueh-Chi Kuo, Tsung-Yen Lee, Tzung-Chi Fu, Li-Jui Chen, Po-Chung Cheng, Che-Chang Hsu
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Patent number: 11134558Abstract: A droplet generator assembly includes a storage tank, a refill system, a droplet generator, and a temperature control system. The storage tank is configured to store a target material. The refill system is connected to the storage tank. The droplet generator includes a reservoir and a nozzle connected to the reservoir, in which the droplet generator is connected to the refill system, and the refill system is configured to deliver the target material to the reservoir. The temperature control system is adjacent to the refill system or the reservoir.Type: GrantFiled: July 11, 2019Date of Patent: September 28, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yu Tu, Yu-Kuang Sun, Shao-Hua Wang, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng, Cheng-Hao Lai, Hsin-Feng Chen, Wei-Shin Cheng, Ming-Hsun Tsai, Yen-Hsun Chen
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Publication number: 20210298161Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.Type: ApplicationFiled: June 3, 2021Publication date: September 23, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG
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Publication number: 20210286273Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.Type: ApplicationFiled: June 1, 2021Publication date: September 16, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang
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Publication number: 20210227676Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.Type: ApplicationFiled: December 28, 2020Publication date: July 22, 2021Inventors: Wei-Shin CHENG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG, Hsiao-Lun CHANG
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Droplet catcher system of EUV lithography apparatus and EUV lithography apparatus maintenance method
Patent number: 11067906Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.Type: GrantFiled: March 2, 2020Date of Patent: July 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang -
Patent number: 11032897Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.Type: GrantFiled: August 22, 2019Date of Patent: June 8, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yu Tu, Han-Lung Chang, Hsiao-Lun Chang, Li-Jui Chen, Po-Chung Cheng
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Publication number: 20210059036Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.Type: ApplicationFiled: August 22, 2019Publication date: February 25, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Yu TU, Han-Lung CHANG, Hsiao-Lun CHANG, Li-Jui CHEN, Po-Chung CHENG
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Droplet Catcher System of EUV Lithography Apparatus and EUV Lithography Apparatus Maintenance Method
Publication number: 20210033986Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.Type: ApplicationFiled: March 2, 2020Publication date: February 4, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Yu Tu, Po-Chung Cheng, Hsiao-Lun Chang, Li-Jui Chen, Han-Lung Chang -
Publication number: 20210026236Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.Type: ApplicationFiled: October 8, 2020Publication date: January 28, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiao-Lun CHANG, Chueh-Chi KUO, Tsung-Yen LEE, Tzung-Chi FU, Li-Jui CHEN, Po-Chung CHENG, Che-Chang HSU
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Patent number: 10880980Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.Type: GrantFiled: May 30, 2019Date of Patent: December 29, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Shin Cheng, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng, Hsiao-Lun Chang
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Patent number: 10802394Abstract: A reticle, a reticle container and a method for discharging static charges accumulated on a reticle are provided. The reticle includes a mask substrate, a reflective multilayer (ML) structure, a capping layer, an absorption structure and a conductive material structure. The mask substrate has a front-side surface and a back-side surface. The reflective ML structure is positioned over the front-side surface of mask substrate. The capping layer is positioned over the reflective ML structure. The absorption structure is positioned over the capping layer. The conductive material structure is positioned over a sidewall surface of the mask substrate and a sidewall surface of the absorption structure.Type: GrantFiled: January 31, 2018Date of Patent: October 13, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsiao-Lun Chang, Chueh-Chi Kuo, Tsung-Yen Lee, Tzung-Chi Fu, Li-Jui Chen, Po-Chung Cheng, Che-Chang Hsu