Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: Antenna diodes used to correct antenna rule violations during the design and formation of integrated circuits are defined within filler cells laid out on the IC chip following the layout of standard electronic module cells and routing of electrical conductors on the chip. The filler cells are disposed in gaps between standard cells containing the electronic modules. The diodes are formed in unconnected pairs that are selectively connected to each other and to an adjacent conductor in order to correct antenna rule violations. Low current leakage is achieved as a result of the use of a fewer number of diode circuits, and the fact that they remain unconnected until used to correct an antenna rule violation.

Abstract: Antenna diodes used to correct antenna rule violations during the design and formation of integrated circuits are defined within filler cells laid out on the IC chip following the layout of standard electronic module cells and routing of electrical conductors on the chip. The filler cells are disposed in gaps between standard cells containing the electronic modules. The diodes are formed in unconnected pairs that are selectively connected to each other and to an adjacent conductor in order to correct antenna rule violations. Low current leakage is achieved as a result of the use of a fewer number of diode circuits, and the fact that they remain unconnected until used to correct an antenna rule violation.