Abstract: The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact.

Abstract: The present invention discloses a puddle etching method of thin film. In a spin etching equipment, pre-wet the wafer by D.I. water and etch solution to remove the contamination and the upper layer of the film on the wafer. Then spin slowly (about 0-50 rpm) and inject etching solution to form a puddle of etching solution which will stay on the wafer, the wafer then keep spin slowly (about 0-50 rpm) such that the puddle of etching solution stay on the wafer and etching is going on by puddle etching. After the thin film is etched, the wafer is spin at higher speed, and D.I. water is injected to rinse. Then, IPA is used to remove the D.I. water by Marangoni effect. Finally raise the speed to dry the wafer.

Abstract: The present invention discloses a puddle etching method of thin film. In a spin etching equipment, pre-wet the wafer by D.I. water and etch solution to remove the contamination and the upper layer of the film on the wafer. Then spin slowly (about 0-50 rpm) and inject etching solution to form a puddle of etching solution which will stay on the wafer, the wafer then keep spin slowly (about 0-50 rpm) such that the puddle of etching solution stay on the wafer and etching is going on by puddle etching. After the thin film is etched, the wafer is spin at higher speed, and D.I. water is injected to rinse. Then, IPA is used to remove the D.I. water by Marangoni effect. Finally raise the speed to dry the wafer.

Abstract: The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact.